Two-Wire Hall-Effect Sensor Family

Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the

文件：1.73062 Mbytes 頁數(shù)：36 Pages

MICRONAS

Two-Wire Hall Effect Sensor Family

文件：185.57 Kbytes 頁數(shù)：20 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

單極霍爾開關(guān)HAL581

Hallwee

霍爾微

Two-Wire Hall-Effect Sensor Family

Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the

文件：1.73062 Mbytes 頁數(shù)：36 Pages

MICRONAS

Two-Wire Hall-Effect Sensor Family

Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the

文件：1.73062 Mbytes 頁數(shù)：36 Pages

MICRONAS

Two-Wire Hall-Effect Sensor Family

Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the

文件：1.73062 Mbytes 頁數(shù)：36 Pages

MICRONAS

Two-Wire Hall-Effect Sensor Family

Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the

文件：1.73062 Mbytes 頁數(shù)：36 Pages

MICRONAS

多功能霍爾效應傳感器系列

HAL 5xy系列由各種以CMOS生產(chǎn)的霍爾開關(guān)組成。它們都具有主動溫度偏置補償，比較器和開漏輸出晶體管。比較器通過霍爾片（霍爾電壓）比較實際磁通量和設定的參考值（開關(guān)點）。輸出晶體管相應開或關(guān)。\n這系列的不同產(chǎn)品以開關(guān)行為和開關(guān)點來區(qū)分。主動偏置補償帶來在電壓和溫度范圍變化下的穩(wěn)定磁場數(shù)據(jù)。此外，磁參數(shù)對機械壓力效應不敏感。產(chǎn)品系為工業(yè)和汽車應用設計，工作電壓范圍從3.8伏到24伏，環(huán)境溫度范圍從–40 °C 到150 °C。產(chǎn)品有 SMD-封裝 SOT89B-1和含鉛的TO92UA-1和TO92UA-2封裝。 ·Switching offset compensation at typically 62 kHz\n·Operates from 3.8 V to 24 V supply voltage\n·Overvoltage protection at all pins\n·Reverse-voltage protection at VDD-pin\n·Magnetic characteristics are robust regarding mechanical stress effects\n·Short-circuit protected open-drain output by therma;

TDK-Micronas

多功能霍爾效應傳感器系列

HAL 5xy系列由各種以CMOS生產(chǎn)的霍爾開關(guān)組成。它們都具有主動溫度偏置補償，比較器和開漏輸出晶體管。比較器通過霍爾片（霍爾電壓）比較實際磁通量和設定的參考值（開關(guān)點）。輸出晶體管相應開或關(guān)。\n這系列的不同產(chǎn)品以開關(guān)行為和開關(guān)點來區(qū)分。主動偏置補償帶來在電壓和溫度范圍變化下的穩(wěn)定磁場數(shù)據(jù)。此外，磁參數(shù)對機械壓力效應不敏感。產(chǎn)品系為工業(yè)和汽車應用設計，工作電壓范圍從3.8伏到24伏，環(huán)境溫度范圍從–40 °C 到150 °C。產(chǎn)品有 SMD-封裝 SOT89B-1和含鉛的TO92UA-1和TO92UA-2封裝。 ·Switching offset compensation at typically 62 kHz\n·Operates from 3.8 V to 24 V supply voltage\n·Overvoltage protection at all pins\n·Reverse-voltage protection at VDD-pin\n·Magnetic characteristics are robust regarding mechanical stress effects\n·Short-circuit protected open-drain output by therma;

TDK-Micronas

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：傳感器，變送器 磁性傳感器 - 開關(guān)（固態(tài)） 描述：MAGNETIC SWITCH TO92-UA

TDK-Micronas GmbH