多功能霍爾效應傳感器系列

HAL 5xy系列由各種以CMOS生產(chǎn)的霍爾開關組成。它們都具有主動溫度偏置補償，比較器和開漏輸出晶體管。比較器通過霍爾片（霍爾電壓）比較實際磁通量和設定的參考值（開關點）。輸出晶體管相應開或關。\n這系列的不同產(chǎn)品以開關行為和開關點來區(qū)分。主動偏置補償帶來在電壓和溫度范圍變化下的穩(wěn)定磁場數(shù)據(jù)。此外，磁參數(shù)對機械壓力效應不敏感。產(chǎn)品系為工業(yè)和汽車應用設計，工作電壓范圍從3.8伏到24伏，環(huán)境溫度范圍從–40 °C 到150 °C。產(chǎn)品有 SMD-封裝 SOT89B-1和含鉛的TO92UA-1和TO92UA-2封裝。 ·Switching offset compensation at typically 62 kHz\n·Operates from 3.8 V to 24 V supply voltage\n·Overvoltage protection at all pins\n·Reverse-voltage protection at VDD-pin\n·Magnetic characteristics are robust regarding mechanical stress effects\n·Short-circuit protected open-drain output by therma;

TDK-Micronas

Two-Wire Hall-Effect Sensor Family

Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the

文件：1.73062 Mbytes 頁數(shù)：36 Pages

MICRONAS

Package：TO-243AA，變式；包裝：帶盒（TB） 功能：卡銷 類別：傳感器，變送器 磁性傳感器 - 開關（固態(tài)） 描述：MAGNETIC SWITCH LATCH SOT89B-1

TDK-Micronas GmbH

Two-Wire Hall-Effect Sensor Family

Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the

文件：1.73062 Mbytes 頁數(shù)：36 Pages

MICRONAS

Two-Wire Hall-Effect Sensor Family

Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the

文件：1.73062 Mbytes 頁數(shù)：36 Pages

MICRONAS

GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 32 - 46 GHz OUTPUT

General Description The HMC579 die is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology. When driven by a +3 dBm signal, the multiplier provides +13 dBm typical output power from 32 to 46 GHz. The Fo isolation is >25 dBc at 38 GHz. The HMC579 is ideal for use in LO multip

文件：273.18 Kbytes 頁數(shù)：6 Pages

HITTITE