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首頁(yè) >HAF2011L>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
HAF2011L	文件：34.67 Kbytes Page：6 Pages	Silicon N Channel MOS FET Series Power Switching Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe 文件：34.67 Kbytes 頁(yè)數(shù)：6 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HAF2011L	文件：121.97 Kbytes Page：9 Pages	Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over 文件：121.97 Kbytes 頁(yè)數(shù)：9 Pages	RENESAS 瑞薩	RENESAS
HAF2011L	文件：300 bytes Page：1 Pages	Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio ? Logic level operation (4 to 6 V Gate drive)\n? Built-in the over temperature shut-down circuit\n? Latch type shut-down operation (Need 0 voltage recovery)\n;	Renesas 瑞薩	Renesas
HAF2011S	文件：34.67 Kbytes Page：6 Pages	Silicon N Channel MOS FET Series Power Switching Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe 文件：34.67 Kbytes 頁(yè)數(shù)：6 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HAF2011S	文件：121.97 Kbytes Page：9 Pages	Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over 文件：121.97 Kbytes 頁(yè)數(shù)：9 Pages	RENESAS 瑞薩	RENESAS
HBO2011NIL	文件：42.51 Kbytes Page：2 Pages	Lamps for Photolithography Description PerkinElmer Optoelectronics is a leading manufacturer of mercury short arc lamps ranging in output power from 1000 to 8000 watts. These lamps are used in the production of printed circuit boards, liquid crystal displays and semiconductors. The HSH Series lamps are used worldwide in mi 文件：42.51 Kbytes 頁(yè)數(shù)：2 Pages	PERKINELMER	PERKINELMER

詳細(xì)參數(shù)

型號(hào)：
HAF2011L
制造商：
HITACHI
制造商全稱：
Hitachi Semiconductor
功能描述：
Silicon N Channel MOS FET Series Power Switching

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	HAF2011L	RENESAS/瑞薩	22+	TO-263	6000	十年配單,只做原裝	詢價(jià)
深圳市能元時(shí)代電子有限公司	HAF2011L	RENESAS	23+	TO-263	71102	##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)	詢價(jià)
深圳市安富世紀(jì)電子有限公司	HAF2011L	RENESAS/瑞薩	23+	TO-263	8400	專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市宏捷佳電子科技有限公司	HAF2011L	RENESAS	25+	TO-263	37650	獨(dú)立分銷(xiāo)商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市賽芯源科技有限公司	HAF2011S	Renesas	18+	SOT-263	41200	原裝正品,現(xiàn)貨特價(jià)	詢價(jià)
深圳市金芯世紀(jì)電子有限公司	HAF2011S	RENESAS/瑞薩	22+	SOT-263	100000	代理渠道/只做原裝/可含稅	詢價(jià)
深圳市一線半導(dǎo)體有限公司	HAF2012		24+	SOT263	17		詢價(jià)
深圳市勤思達(dá)科技有限公司	HAF2012		12+	TO-263	15000	全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)
深圳市華來(lái)深電子有限公司	HAF2012	HAF	23+	TO-262	8650	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	HAF2012	NEC	23+	TO263	12100	原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)

更多HAF2011L供應(yīng)商更新時(shí)間2026-1-20 14:02:00

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