| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HAF2007 | Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件:42.9 Kbytes 頁數(shù):6 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | |
HAF2007 | Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件:95.12 Kbytes 頁數(shù):9 Pages | RENESAS 瑞薩 | RENESAS | |
HAF2007 | Silicon N Channel MOS FET Series Power Switching Description\nThis FET has the over temperature shut-down capability sensing to the junction temperature.\nThis FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over po ?? Logic level operation (4 to 6 V Gate drive)\n?? High endurance capability against to the short circuit\n?? Built-in the over temperature shut-down circuit\n?? Latch type shut-down operation (Need 0 voltage recovery); | Renesas 瑞薩 | Renesas | |
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件:95.12 Kbytes 頁數(shù):9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件:95.12 Kbytes 頁數(shù):9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件:95.12 Kbytes 頁數(shù):9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件:95.12 Kbytes 頁數(shù):9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件:95.12 Kbytes 頁數(shù):9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件:42.9 Kbytes 頁數(shù):6 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件:42.9 Kbytes 頁數(shù):6 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI |
技術(shù)參數(shù)
- 通道數(shù):
Single
- 汽車業(yè):
YES
- VDSS (V):
60
- ID (A):
5
- RDS (ON)(mΩ) 最大值@4V至4.5V:
120
- RDS (ON)(Ω) 典型值@4V至4.5V:
73
- RDS (ON)(mΩ) 最大值@8V至10V:
75
- RDS (ON)(Ω) 典型值@8V至10V:
55
- Pch (W):
20
- Tsd (°C) 典型值:
175
- 封裝類型:
DPAK(S)
- 生產(chǎn)狀態(tài):
Non-promotion
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HITACHI |
24+ |
TO252 |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
RENESAS |
24+ |
TO252 |
2645 |
詢價 | |||
RENESAS |
24+ |
TO252 |
1068 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
RENESAS |
25+ |
TO-252 |
14955 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
RENESAS |
25+ |
TO-252 |
12400 |
現(xiàn)貨 |
詢價 | ||
VBsemi(臺灣微碧) |
2447 |
TO252 |
105000 |
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
VBSEMI/臺灣微碧 |
23+ |
TO252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
RENESAS/瑞薩 |
2022+ |
TO-252 |
9400 |
原廠代理 終端免費提供樣品 |
詢價 | ||
KA |
23+ |
TO- |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
VBsemi |
21+ |
TO252 |
10065 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 |
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