絲印：HAF；Package：TSOP-5；LDO Regulator, 150 mA, 38V, 1 A IQ, with PG

文件：3.62587 Mbytes 頁數(shù)：30 Pages

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Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件：53.89 Kbytes 頁數(shù)：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o

文件：88.3 Kbytes 頁數(shù)：8 Pages

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瑞薩

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o

文件：88.3 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit opertion to shut-down the gate voltage in case of high junction temperature like applying over

文件：97.05 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

Silicon P Channel MOS FET Series Power Switching

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe

文件：35.21 Kbytes 頁數(shù)：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit opertion to shut-down the gate voltage in case of high junction temperature like applying over

文件：97.05 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit opertion to shut-down the gate voltage in case of high junction temperature like applying over

文件：97.05 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit opertion to shut-down the gate voltage in case of high junction temperature like applying over

文件：97.05 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit opertion to shut-down the gate voltage in case of high junction temperature like applying over

文件：97.05 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩