500 mW Zener Diode 1.7 to 37.2 Volts

Features ? Low Leakage ? Low Zener Impedance ? High Reliability

文件：108.27 Kbytes 頁數(shù)：4 Pages

MCC

1G-Bit 3.3V NAND FLASH MEMORY

The H7A11G21B1CH (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V \n? Single-Level Cell (SLC) technology.\n? Highest Performance– Read performance (Max.)\n? Sequential read cycle: 25ns– Write Erase performance\n? Block erase time: 2ms(typ.)– Endurance 100,000 Erase/Program Cycles– 10-years data retention\n? Copy Back\n? Space Efficient Packaging– 48-pin standa;

Axeme

1G-Bit 3.3V NAND FLASH MEMORY

Offered in 128Mx8bit, the H7A11G21F1CX is a 1G-bit NAND Flash Memory with spare 32M-bit. The device is offered in 3.3V VCC. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400us on the (2K+64)Byte page an \n? Single-Level Cell (SLC) technology.\n? Automatic Program and Erase– Page Program :(2K + 64) Byte\n? Fast Write Cycle Time– Page Program time : 400us(Typ.)– Block Erase Time : 4.5ms(Typ.)\n? Hardware Data Protection– Program/ Erase Lockout During Power Transitions\n? Unique ID for Copyright Pr;

Axeme

Space-saving Plug-in Signal Conditioners H-UNIT

文件：108.5 Kbytes 頁數(shù)：3 Pages

MSYSTEM

愛模

Space-saving Plug-in Signal Conditioners H-UNIT

文件：108.5 Kbytes 頁數(shù)：3 Pages

MSYSTEM

愛模

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features ? Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. ? Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

文件：55.92 Kbytes 頁數(shù)：7 Pages

RENESAS

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