絲?。?strong>H60；Package：EMT6；Complex Digital Transistors (Bias Resistor Built-in Transistors)

文件：690.27 Kbytes 頁(yè)數(shù)：6 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/h6050s/marking.html">H6050S；Package：SOT-252；P-Channel Enhancement Mode MOSFET

Features * Vos =-60V,lo =-16A Ros 52mQ @ Vos=-10V (Typ)

文件：1.8702 Mbytes 頁(yè)數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子

絲?。?a target="_blank" title="Marking" href="/h6050sd/marking.html">H6050SD；Package：SO-8；175°C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Rated to +175°C – ideal for high ambient temperature environments 100 Unclamped Inductive Switching – ensures more reliable and robust end application Low RDS(ON) – minimises power losses Low Qg – minimises switching losses Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Ha

文件：531.54 Kbytes 頁(yè)數(shù)：7 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/h6010ldw/marking.html">H6010LDW；Package：PowerDI5060-8/SWP；60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: ? Engine management systems ? Body control electronics ? DC-DC converters Features and Benefits ?

文件：572.32 Kbytes 頁(yè)數(shù)：7 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/h60epr7/marking.html">H60EPR7；Package：PG-TO247-3-U04；TRENCHSTOP? IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage

Features ? VCE = 670 V ? IC = 60 A ? Pin-to-pin creepage distance > 4.8 mm ? Pin-to-pin clearance distance > 3.4 mm ? Optimized monolithic diode for PFC applications ? Improved EMI behavior with lower dv/dt ? Very low VCEsat = 1.4 V (typ.) at 25°C ? Stable temperature behavior ? Low tempe

文件：1.40085 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/h6025l/marking.html">H6025L；Package：SOT669；N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology

1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated to 300 A, optimized for DC load switch and hot-swap applications. 2. Features and benefits ? 100

文件：308.58 Kbytes 頁(yè)數(shù)：13 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/h60ewr6/marking.html">H60EWR6；Package：PG-TO247-3-HCC；The TRENCHSTOP??5 WR6 family in the TO-247-3-HCC package offers improved reliability against package contamination

文件：1.65912 Mbytes 頁(yè)數(shù)：17 Pages

INFINEON

英飛凌

LAN DISCRETE TRANSFORMER MODULES

LAN FILTERED CONNECTORS LAN GIGABIT IC CROSS REFERENCE LAN 10/100BASE-TX IC CROSS REFERENCE LAN 10BASE-T IC CROSS REFERENCE

文件：253.78 Kbytes 頁(yè)數(shù)：12 Pages

PULSE

Failsafe Watchdog

Description The H6006 is a monolithic low power CMOS device combining a programmable digital timer and a series of voltage comparators on the same chip. The device is specially convenient for Watch-Dog functions such as microprocessor and supply voltage monitoring. The watchdog part is designed

文件：275.66 Kbytes 頁(yè)數(shù)：8 Pages

EMMICRO

Failsafe Watchdog

Description The H6006 is a monolithic low power CMOS device combining a programmable digital timer and a series of voltage comparators on the same chip. The device is specially convenient for Watch-Dog functions such as microprocessor and supply voltage monitoring. The watchdog part is designed

文件：275.66 Kbytes 頁(yè)數(shù)：8 Pages

EMMICRO