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ROHM

羅姆

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1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSS leakage even when hot, high efficiency and high current. Rated to 380 A, optimized for DC load switch and hot-swap applications. 2. Features and benefits ? 100

文件：295.3 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

100V Single N-Channel MOSFET

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文件：1.14365 Mbytes 頁數(shù)：12 Pages

ETCList of Unclassifed Manufacturers

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文件：1.14365 Mbytes 頁數(shù)：12 Pages

ETCList of Unclassifed Manufacturers

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ETCList of Unclassifed Manufacturers

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1000base -t magnet ics module Designed to Support Gigabit Transceivers

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PULSE