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          首頁 >H27>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          H27U4G8F2D

          4 Gbit (512M x 8 bit) NAND Flash

          Summary Description H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided i

          文件:1.01566 Mbytes 頁數(shù):62 Pages

          HYNIX

          海力士

          H27U4G8F2DKA-BM

          4 Gbit (512M x 8 bit) NAND Flash

          Summary Description H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided i

          文件:1.01566 Mbytes 頁數(shù):62 Pages

          HYNIX

          海力士

          H27U4G8F2DTR-BC

          4 Gbit (512M x 8 bit) NAND Flash

          Summary Description H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided i

          文件:1.01566 Mbytes 頁數(shù):62 Pages

          HYNIX

          海力士

          H27U4G8F2DTR-BI

          4 Gbit (512M x 8 bit) NAND Flash

          Summary Description H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided i

          文件:1.01566 Mbytes 頁數(shù):62 Pages

          HYNIX

          海力士

          H27U8G8G5DTR-BC

          4 Gbit (512M x 8 bit) NAND Flash

          Summary Description H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided i

          文件:1.01566 Mbytes 頁數(shù):62 Pages

          HYNIX

          海力士

          H27U8G8G5DTR-BI

          4 Gbit (512M x 8 bit) NAND Flash

          Summary Description H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided i

          文件:1.01566 Mbytes 頁數(shù):62 Pages

          HYNIX

          海力士

          H27UAG8T2B

          16Gb (2048M x 8bit) NAND Flash

          DESCRIPTION The H27UAG8T2B is a single 3.3V 16Gbit NAND flash memory. The Device contains 2 planes in a single die. Each plane is made up of the 512 blocks. Each block consists of 256 programmable pages. Each page contains 8,640 bytes. The pages are subdivided into an 8,192-bytes main data stor

          文件:1.4409 Mbytes 頁數(shù):61 Pages

          HYNIX

          海力士

          H27UCG8T2ATR

          64Gb(8192M x 8bit) Legacy MLC NAND Flash

          Product Feature ■ Multi Level Cell (MLC) Technology ■ Power Supply Voltage - VCC / VCCq= 2.7V ~ 3.6V ■ Organization - Page Size : 8192 + 640(Spare) bytes - Block Size : 2M + 160K bytes, 256pages - Plane Size : 2048 + 42(Extended) blocks - Device Size : 4096 + 84(Extended) blocks ■ Page Re

          文件:3.19418 Mbytes 頁數(shù):56 Pages

          HYNIX

          海力士

          H27UCG8T2ATR-BC

          64Gb(8192M x 8bit) Legacy MLC NAND Flash

          Product Feature ■ Multi Level Cell (MLC) Technology ■ Power Supply Voltage - VCC / VCCq= 2.7V ~ 3.6V ■ Organization - Page Size : 8192 + 640(Spare) bytes - Block Size : 2M + 160K bytes, 256pages - Plane Size : 2048 + 42(Extended) blocks - Device Size : 4096 + 84(Extended) blocks ■ Page Re

          文件:3.19418 Mbytes 頁數(shù):56 Pages

          HYNIX

          海力士

          H27649-B

          HDSL2 Transformers

          文件:107.12 Kbytes 頁數(shù):2 Pages

          COILCRAFT

          技術參數(shù)

          • IR (mA):

            ?0.001

          • VR (V):

            ?21

          • PD (W):

            ?0.5

          • VZ (V):

            ?25.9

          • ZZT (Ω):

            ?

          • IZT (mA):

            ?2.0

          • ZZK (Ω):

            ?

          • IZK (mA):

            ?

          • Package Qty:

            ?Bulk

          • FIT:

            ?30; Tj=100℃

          供應商型號品牌批號封裝庫存備注價格
          ROHM
          16+
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          10000
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          ROHM
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          6200
          100%原裝正品現(xiàn)貨
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          HYNIX
          25+
          TSOP
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          Hynix
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          HYNIX
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          5418
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          HYNIX
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          HYNIX
          13+/14+
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          HYNIX
          0831A+
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          1200
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          HynixSemiconductor
          24+
          TSOP1
          6000
          進口原裝正品假一賠十,貨期7-10天
          詢價
          HYNIX
          16+
          TSOP48
          8800
          進口原裝大量現(xiàn)貨熱賣中
          詢價
          更多H27供應商 更新時間2026-1-19 16:39:00
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