絲印：H23；Package：SOT-26；Dual digital transistors

Features 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low saturation voltage, typically VCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 4) These transistors can be used at high current levels, IC=600mA. 5) Built-in bias resis

文件：64.42 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆

絲?。?strong>H23；Package：SOT-26；Dual digital transistors

Features 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low saturation voltage, typically VCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 4) These transistors can be used at high current levels, IC=600mA. 5) Built-in bias resis

文件：57.54 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆

絲?。?strong>H23；Package：TUMT6；Dual digital transistors

Features 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low saturation voltage, typically VCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 4) These transistors can be used at high current levels, IC=600mA. 5) Built-in bias resis

文件：101.63 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

絲印：H23；Package：SOD-123FL；Schottky Barrier Rectifiers

文件：498.9 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

絲印：H23；Package：SOD-123F；Schottky Barrier Rectifiers

文件：461.88 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

絲?。?a target="_blank" title="Marking" href="/h230ep/marking.html">H230EP；Package：SOIC；3.3-V CAN TRANSCEIVERS

FEATURES Controlled Baseline ? One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of ?55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree? Operates With a 3.3-V Supply Low Power Rep

文件：651.34 Kbytes 頁數(shù)：32 Pages

TI

德州儀器

絲印：H230EP；Package：SOIC；3.3-V CAN TRANSCEIVERS

FEATURES Controlled Baseline ? One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of ?55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree? Operates With a 3.3-V Supply Low Power Rep

文件：651.34 Kbytes 頁數(shù)：32 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/h233ep/marking.html">H233EP；Package：SOIC；3.3-V CAN TRANSCEIVER

FEATURES · Bus-Pin Fault Protection Exceeds ±36 V · Bus-Pin ESD Protection Exceeds 16-kV HBM · Compatible With ISO 11898 · Signaling Rates(1) up to 1 Mbps · Extended –7-V to 12-V Common-Mode Range · High-Input Impedance Allows for 120 Nodes · LVTTL I/Os Are 5-V Tolerant · Adjustable Driver

文件：672.78 Kbytes 頁數(shù)：29 Pages

TI

德州儀器

絲印：H233EP；Package：SOIC；3.3-V CAN TRANSCEIVER

FEATURES · Bus-Pin Fault Protection Exceeds ±36 V · Bus-Pin ESD Protection Exceeds 16-kV HBM · Compatible With ISO 11898 · Signaling Rates(1) up to 1 Mbps · Extended –7-V to 12-V Common-Mode Range · High-Input Impedance Allows for 120 Nodes · LVTTL I/Os Are 5-V Tolerant · Adjustable Driver

文件：672.78 Kbytes 頁數(shù)：29 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/h230ep/marking.html">H230EP；Package：SOIC；3.3-V CAN TRANSCEIVERS

FEATURES Controlled Baseline ? One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of ?55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree? Operates With a 3.3-V Supply Low Power Rep

文件：651.34 Kbytes 頁數(shù)：32 Pages

TI

德州儀器