Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件：245.3 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導體

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件：2.07738 Mbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導體

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium?Aluminum?Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo?detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion?free control of low

文件：338.65 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導體

6引腳DIP雙向模擬FET輸出光電耦合器

H11FXM系列包含一個砷鋁化鎵IRED發(fā)光二極管，該二極管光學耦合至對稱雙向硅光電探測器。 探測器與輸入端絕緣，功能類似于理想的隔離式FET，設(shè)計用于低電平AC和DC模擬信號的無失真控制。 H11FXM系列器件采用雙列直插封裝。 ? 作為一個遠程可變電阻：\n? ≤ 100Ω至≥ 300MΩ\n? ≤ 15pF分流電容\n? ≥ 100GΩ I/O隔離電阻作為模擬開關(guān)：\n? 極低失調(diào)電壓\n? 60 Vpk-pk信號能力\n? 無電荷注入或閂鎖\n? UL認證（文件編號E90700）;

ONSEMI

安森美半導體

Package：6-DIP（0.300"，7.62mm）；包裝：散裝 類別：隔離器 光隔離器 - 晶體管，光電輸出 描述：OPTOISOLTR 7.5KV PHOTO FET 6-DIP

ONSEMI

安森美半導體