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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          EMH10

          絲?。?strong>H10;Package:EMT6;General purpose (dual digital transistors)

          Features 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Application INVERTER, INTERFACE, DRIVER

          文件:119.86 Kbytes 頁(yè)數(shù):3 Pages

          ROHM

          羅姆

          UMH10N

          絲?。?strong>H10;Package:UMT6;General purpose (dual digital transistors)

          Features 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Application INVERTER, INTERFACE, DRIVER

          文件:119.86 Kbytes 頁(yè)數(shù):3 Pages

          ROHM

          羅姆

          UMH10NFHA

          絲?。?strong>H10;Package:SOT-363;General purpose (Dual digital transistor)

          文件:831.46 Kbytes 頁(yè)數(shù):8 Pages

          ROHM

          羅姆

          HRH10N65ANF

          絲?。?a target="_blank" title="Marking" href="/h10n65anf/marking.html">H10N65ANF;Package:TO-220F;650V N-Channel Planar MOSFET

          Features ?RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ? UltraLow gate Charge(typical typical33 .4nC) ? Low Crss (typical typical1.04 pF) ? Fast switching capability ? 100 avalanche tested ? Improved dv/ dt capability Applications ? Switch Mode Power Supply ( ? Uninterruptible Power Supply(UPS) ? Power

          文件:2.79466 Mbytes 頁(yè)數(shù):11 Pages

          SY

          順燁電子

          HRH10N65ANF

          絲?。?a target="_blank" title="Marking" href="/h10n65anf/marking.html">H10N65ANF;Package:TO-220F;650V N-Channel Planar MOSFET

          Features Ultra Low gate Charge Low Crss Fast switching capability

          文件:3.32761 Mbytes 頁(yè)數(shù):8 Pages

          SY

          順燁電子

          HRH10N65ANP

          絲?。?a target="_blank" title="Marking" href="/h10n65anp/marking.html">H10N65ANP;Package:TO-220;650V N-Channel Planar MOSFET

          Features Ultra Low gate Charge Low Crss Fast switching capability

          文件:3.32761 Mbytes 頁(yè)數(shù):8 Pages

          SY

          順燁電子

          HRH10N65ANP

          絲?。?a target="_blank" title="Marking" href="/h10n65anp/marking.html">H10N65ANP;Package:TO-220;650V N-Channel Planar MOSFET

          Features ?RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ? UltraLow gate Charge(typical typical33 .4nC) ? Low Crss (typical typical1.04 pF) ? Fast switching capability ? 100 avalanche tested ? Improved dv/ dt capability Applications ? Switch Mode Power Supply ( ? Uninterruptible Power Supply(UPS) ? Power

          文件:2.79466 Mbytes 頁(yè)數(shù):11 Pages

          SY

          順燁電子

          HRH10N65ANV

          絲?。?a target="_blank" title="Marking" href="/h10n65anv/marking.html">H10N65ANV;Package:TO-3P;650V N-Channel Planar MOSFET

          Features ?RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ? UltraLow gate Charge(typical typical33 .4nC) ? Low Crss (typical typical1.04 pF) ? Fast switching capability ? 100 avalanche tested ? Improved dv/ dt capability Applications ? Switch Mode Power Supply ( ? Uninterruptible Power Supply(UPS) ? Power

          文件:2.79466 Mbytes 頁(yè)數(shù):11 Pages

          SY

          順燁電子

          HRH10N65ANV

          絲?。?a target="_blank" title="Marking" href="/h10n65anv/marking.html">H10N65ANV;Package:TO-3P;650V N-Channel Planar MOSFET

          Features Ultra Low gate Charge Low Crss Fast switching capability

          文件:3.32761 Mbytes 頁(yè)數(shù):8 Pages

          SY

          順燁電子

          HRH10N65ANW

          絲?。?a target="_blank" title="Marking" href="/h10n65anw/marking.html">H10N65ANW;Package:TO-247;650V N-Channel Planar MOSFET

          Features Ultra Low gate Charge Low Crss Fast switching capability

          文件:3.32761 Mbytes 頁(yè)數(shù):8 Pages

          SY

          順燁電子

          詳細(xì)參數(shù)

          • 型號(hào):

            H10

          • 制造商:

            ROHM

          • 功能描述:

            LEAK ABSORB NPNx2 SMD(Surface Mount) Transistor UMT5/6 150mW

          • 功能描述:

            LEAK ABSORB NPNx2 SMD(Surface Mount) Transistor UMT5/6 150mW - free partial T/R at 500.

          • 制造商:

            ROHM Semiconductor

          • 功能描述:

            Semiconductor(Discrete),UMH10NTN,Transi

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          原裝
          25+
          SOT-363
          20300
          原裝特價(jià)UMH10N即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
          詢價(jià)
          ROHM
          16+
          SOT-363
          23400
          進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
          詢價(jià)
          ROHM
          SOT-363
          30216
          提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
          詢價(jià)
          ROHM
          24+
          2500
          自己現(xiàn)貨
          詢價(jià)
          SOT-363
          23+
          NA
          15659
          振宏微專業(yè)只做正品,假一罰百!
          詢價(jià)
          長(zhǎng)電
          25+23+
          SOT-363
          23758
          絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價(jià)
          ROHM
          18+
          SOT-363
          41200
          原裝正品,現(xiàn)貨特價(jià)
          詢價(jià)
          ROHM
          21+
          SOT-363
          21000
          一級(jí)代理進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
          詢價(jià)
          24+
          SOT-363
          65300
          一級(jí)代理/放心購(gòu)買!
          詢價(jià)
          CJ/長(zhǎng)電
          21+
          SOT-363
          150000
          長(zhǎng)電雙數(shù)字晶體管優(yōu)勢(shì)供應(yīng)
          詢價(jià)
          更多H10供應(yīng)商 更新時(shí)間2026-1-19 11:17:00
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