RF POWER GAN TRANSISTOR

文件：59.74 Kbytes 頁數(shù)：2 Pages

POLYFET

GaN SHORTFORM

Polyfet RF Devices

10/100 BASE-T DUAL PORT THROUGH HOLE MAGNETICS

文件：255.55 Kbytes 頁數(shù)：1 Pages

MNC

銘普光磁

Silicon N Channel MOS FET Series Power Switching

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over pow

文件：54.85 Kbytes 頁數(shù)：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOSFET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

文件：92.92 Kbytes 頁數(shù)：9 Pages

RENESAS

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