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          GTRA362002FC
          Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz
          
Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
? GaN on 
          文件：435.98 Kbytes 頁(yè)數(shù)：8 Pages
          WOLFSPEED
          

          GTRA362002FC
          Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz
          文件：233.42 Kbytes 頁(yè)數(shù)：5 Pages
          CREE
          科銳
          

          GTRA362002FC-V1
          Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz
          
Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
? GaN on 
          文件：435.98 Kbytes 頁(yè)數(shù)：8 Pages
          WOLFSPEED
          

          GTRA362002FC-V1-R0
          Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz
          
Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
? GaN on 
          文件：435.98 Kbytes 頁(yè)數(shù)：8 Pages
          WOLFSPEED
          

          GTRA362002FC-V1-R2
          Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz
          
Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
? GaN on 
          文件：435.98 Kbytes 頁(yè)數(shù)：8 Pages
          WOLFSPEED
          

          GTRA362002FC-V1
          High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz
          The GTRA362002FC is a 200-watt (P3dB) GaN-on=SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.  ·Asymmetrical Doherty design: Main P3dB 85 W Typ; Peak P3dB 115 W Typ\n·Typical Pulsed CW performance; 3500 MHz; 48 V; combined outputs\n·Output power at P3dB 200 W\n·Efficiency 60%\n·Gain 12.5 dB\n·Capable of handling 10:1 VSWR @50 V; 30 W (CW) output power\n·Low thermal resistance\n·Pb-free an;
          MACOM
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Min Frequency (MHz)：
            3300
          • Max Frequency(MHz)：
            3900
          • P3dB Output Power(W)：
            200
          • Gain(dB)：
            13.5
          • Efficiency(%)：
            42
          • Operating Voltage(V)：
            48
          • Package Category：
            Earless
          • Form：
            Packaged Discrete Transistor
          • Technology：
            GaN-on-SiC
          
            
          
        
          
            
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          24+
          		

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          CREE/科銳
          		

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          MACOM Technology Solutions
          		

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          更多GTRA362002FC供應(yīng)商
            更新時(shí)間2026-1-18 14:15:00
        
          
        
          
          
          
            
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