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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          AP9101CAK6-ALTRG1
          絲?。?strong>GTR；Package：SOT26；SINGLE CHIP SOLUTION FOR 1-CELL Li BATTERY PACK
          文件：742.23 Kbytes 頁數(shù)：18 Pages
          DIODES
          美臺(tái)半導(dǎo)體
          

          GTRA184602FC
          Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz
          
Description
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular
power amplifier applications. It features input matching, high
efficiency, and a thermally-enhanced package with earless flange.
Features
? GaN on SiC HEMT
          文件：693.96 Kbytes 頁數(shù)：9 Pages
          WOLFSPEED
          

          GTRA184602FC-V1
          Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz
          
Description
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular
power amplifier applications. It features input matching, high
efficiency, and a thermally-enhanced package with earless flange.
Features
? GaN on SiC HEMT
          文件：693.96 Kbytes 頁數(shù)：9 Pages
          WOLFSPEED
          

          GTRA184602FC-V1-R0
          Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz
          
Description
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular
power amplifier applications. It features input matching, high
efficiency, and a thermally-enhanced package with earless flange.
Features
? GaN on SiC HEMT
          文件：693.96 Kbytes 頁數(shù)：9 Pages
          WOLFSPEED
          

          GTRA184602FC-V1-R2
          Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz
          
Description
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular
power amplifier applications. It features input matching, high
efficiency, and a thermally-enhanced package with earless flange.
Features
? GaN on SiC HEMT
          文件：693.96 Kbytes 頁數(shù)：9 Pages
          WOLFSPEED
          

          GTRA214602FC
          Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz
          
Description
The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high
electron mobility transistor (HEMT) designed for use in
multi-standard cellular power amplifier applications. It
features input matching, high efficiency, and a thermallyenhanced package with earless flange.
Features
? GaN on 
          文件：522.63 Kbytes 頁數(shù)：8 Pages
          WOLFSPEED
          

          GTRA214602FC-V1
          Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz
          
Description
The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high
electron mobility transistor (HEMT) designed for use in
multi-standard cellular power amplifier applications. It
features input matching, high efficiency, and a thermallyenhanced package with earless flange.
Features
? GaN on 
          文件：522.63 Kbytes 頁數(shù)：8 Pages
          WOLFSPEED
          

          GTRA214602FC-V1-R0
          Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz
          
Description
The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high
electron mobility transistor (HEMT) designed for use in
multi-standard cellular power amplifier applications. It
features input matching, high efficiency, and a thermallyenhanced package with earless flange.
Features
? GaN on 
          文件：522.63 Kbytes 頁數(shù)：8 Pages
          WOLFSPEED
          

          GTRA214602FC-V1-R2
          Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz
          
Description
The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high
electron mobility transistor (HEMT) designed for use in
multi-standard cellular power amplifier applications. It
features input matching, high efficiency, and a thermallyenhanced package with earless flange.
Features
? GaN on 
          文件：522.63 Kbytes 頁數(shù)：8 Pages
          WOLFSPEED
          

          GTRA260502M
          Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz
          
Description
The GTRA260502M is a 50-watt (P3dB) GaN on SiC high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a thermallyenhanced DFN SMD package.
Features
? GaN on SiC HEMT technology
? T
          文件：762.29 Kbytes 頁數(shù)：9 Pages
          WOLFSPEED
          

          
            
          
		
          
            
          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          
                
          



          DiodesIncorporated
          		

          24+
          		

          SOT-26
          		

          66800
          		

          原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源！
          		
詢價(jià)
          

          



          DIODES/美臺(tái)
          		

          20+
          		

          SMD
          		

          88800
          		

          DIODES原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
          		
詢價(jià)
          

          



          DIODES
          		

          ROHS+Original
          		

          SOT26
          		

          25890
          		

          原裝現(xiàn)貨 庫(kù)存特價(jià)/長(zhǎng)期供應(yīng)元器件代理經(jīng)銷
          		
詢價(jià)
          

          



          Diodes Incorporated
          		

          24+
          		

          SOT-26
          		

          65200
          		

          一級(jí)代理/放心采購(gòu)
          		
詢價(jià)
          

          



          DIODES
          		

          25+
          		

          SOT-26
          		

          3000
          		

          就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
          		
詢價(jià)
          

          



          DIODES/美臺(tái)
          		

          23+
          		

          SOT26
          		

          12000
          		

          原裝正品假一罰百!可開增票!
          		
詢價(jià)
          

          



          DIODES/美臺(tái)
          		

          23+
          		

          SOT-26
          		

          50000
          		

          全新原裝正品現(xiàn)貨,支持訂貨
          		
詢價(jià)
          

          



          DIODES
          		

          22+
          		

          NA
          		

          12080
          		

          加我QQ或微信咨詢更多詳細(xì)信息,
          		
詢價(jià)
          

          



          DIODES/美臺(tái)
          		

          24+
          		

          NA
          		

          30000
          		

          房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談
          		
詢價(jià)
          

          



          DIODESINCORPORATED
          		

          23+
          		

          SOT-23-6
          		

          6289
          		

          原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳
          		
詢價(jià)
          

            
          
        
          
        
          更多GTR供應(yīng)商
            更新時(shí)間2026-1-19 15:03:00
        
          
        
          
          
          
            
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