Discrete IGBTs Silicon N-Channel IGBT

Features 1. 6.5th generation 2. The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. 3. Enhancement mode 4. High-speed switching IGBT : tf = 0.20 μs (typ.) (IC = 40 A) FWD : trr= 0.60 μs (typ.) (IF = 15 A) 5. Low saturation voltage : VC

文件：230.28 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

IGBT for soft switching applications

Feature：Fast switching / Low saturation voltage\nNumber of Circuits：2\nBuilt-in Diodes：Yes\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國 / 日本 Collector Current IC 40 A \nBreakdown Voltage VCES 1200 V ;

Toshiba

東芝

Package：TO-3P-3，SC-65-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：DISCRETE IGBT TRANSISTOR TO-3PN(

Toshiba Semiconductor and Storage

Discrete IGBTs Silicon N-Channel IGBT

Features 1. 6.5th generation 2. The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. 3. Enhancement mode 4. High-speed switching IGBT : tf = 0.20 μs (typ.) (IC = 40 A) FWD : trr= 0.60 μs (typ.) (IF = 15 A) 5. Low saturation voltage : VC

文件：230.28 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝