PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

文件：168.62 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

絲?。?a target="_blank" title="Marking" href="/gt400p10/marking.html">GT400P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT400P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：586.13 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：GT400P10；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT400P10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0189 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gt400p10/marking.html">GT400P10；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT400P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：931.83 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

The 4th Generation Current Resonance Inverter Switching Applications ? Enhancement-mode ? High speed: tf = 0.30 μs (typ.) (IC = 60 A) ? Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)

文件：151.35 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝

Discrete IGBTs Silicon N-Channel IGBT

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：222.84 Kbytes 頁數(shù)：8 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：227.53 Kbytes 頁數(shù)：4 Pages

TOSHIBA

東芝

N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：271.48 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝