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          首頁(yè) >GT02>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          GT023N10TL

          絲?。?a target="_blank" title="Marking" href="/gt023n10/marking.html">GT023N10;Package:TOLL-8L;N-Channel Enhancement Mode Power MOSFET

          Description The GT023N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:992.28 Kbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT023N10TL

          N-Channel Enhancement Mode Power MOSFET

          Description The GT023N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:992.28 Kbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT023N10TLA

          絲印:GT023N10;Package:TOLL-8L;N-Channel Enhancement Mode Power MOSFET

          Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

          文件:1.11145 Mbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT023N10TLA

          N-Channel Enhancement Mode Power MOSFET

          Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

          文件:1.11145 Mbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT023N10TLA

          N-Channel Enhancement Mode Power MOSFET

          Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

          文件:1.11145 Mbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT023N10TLA

          N-Channel Enhancement Mode Power MOSFET

          Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

          文件:1.11145 Mbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT023N10TLA

          N-Channel Enhancement Mode Power MOSFET

          Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

          文件:1.11145 Mbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT023N10TLA

          N-Channel Enhancement Mode Power MOSFET

          Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

          文件:1.11145 Mbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT023N10TLA

          N-Channel Enhancement Mode Power MOSFET

          Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

          文件:1.11145 Mbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT023N10TLA

          N-Channel Enhancement Mode Power MOSFET

          Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

          文件:1.11145 Mbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          技術(shù)參數(shù)

          • Package:

            TO-263

          • Type:

            N

          • ESD Diode:

            NO

          • Vds(V):

            40

          • Vgs(V):

            ±20

          • Id(A):

            140

          • Pd(W):

            85

          • Vgs(th)max(V):

            2.4

          • Rds(on)mΩ(typ)@Vgs=10V:

            1.9

          • Rds(on)mΩ(typ)@Vgs=4.5V:

            2.5

          • Rds(on)mΩ(max)@Vgs=10V:

            2.4

          • Rds(on)mΩ(max)@Vgs=4.5V:

            3

          • Qg(nC):

            57

          • Qgs(nC):

            9

          • Qgd(nC):

            15

          • Ciss(pF):

            3235

          • Crss(pF):

            46

          • Technology:

            SGT

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          更多GT02供應(yīng)商 更新時(shí)間2026-1-20 16:01:00
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