絲?。?strong>GT02；SAW Bandpass Filters | Wireless Communications

Features ? 868.6 MHz center frequency ? Ceramic package for Surface Mounted Technology ? Low Loss: 2.6 dB typical value within PassBand Width 868 to 870 MHz ? Good rejections specially for the LTE band and the UMTS band ? Maximum pulse power: 27 dBm Applications ? Remote control - RF ? W

文件：496.53 Kbytes 頁數(shù)：7 Pages

RAKON

絲?。?a target="_blank" title="Marking" href="/gt020n04a/marking.html">GT020N04A；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT020N04D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：923.84 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gt020n10/marking.html">GT020N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT020N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04406 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gt020n10/marking.html">GT020N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT020N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.07831 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：GT023N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：950.3 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：GT023N10；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：924.7 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：GT023N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：886.98 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gt023n10/marking.html">GT023N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：944 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gt023n10/marking.html">GT023N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：992.28 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gt023n10/marking.html">GT023N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.11145 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體