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          首頁 >GT01>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          GT013N04D5C

          絲印:GT013N04;Package:DFN5/6-8L;N-Channel Enhancement Mode Power MOSFET

          Description The GT013N04D5C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:881.37 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT013N04D5CH

          絲?。?a target="_blank" title="Marking" href="/gt013n04h/marking.html">GT013N04H;Package:DFN5/6-8L;N-Channel Enhancement Mode Power MOSFET

          Description The GT013N04D5CH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:874.72 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT013N04D5H

          絲印:GT013N04H;Package:DFN5/6-8L;N-Channel Enhancement Mode Power MOSFET

          Description The GT013N04D5H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:827.4 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT013N04TI

          絲?。?a target="_blank" title="Marking" href="/gt013n04i/marking.html">GT013N04I;Package:TO-220;N-Channel Enhancement Mode Power MOSFET

          Description The GT013N04TI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:850.38 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT014N04TL

          絲?。?a target="_blank" title="Marking" href="/gt014n04/marking.html">GT014N04;Package:TOLL-8L;N-Channel Enhancement Mode Power MOSFET

          Description The GT014N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:966.89 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT015N06TL

          絲?。?a target="_blank" title="Marking" href="/gt015n06/marking.html">GT015N06;Package:TOLL-8L;N-Channel Enhancement Mode Power MOSFET

          Description The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:938.91 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT015N06TLA

          絲?。?a target="_blank" title="Marking" href="/gt015n06/marking.html">GT015N06;Package:TOLL-8L;N-Channel Enhancement Mode Power MOSFET

          Description The GT015N06TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

          文件:1.15807 Mbytes 頁數(shù):7 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT015N10TL

          絲?。?a target="_blank" title="Marking" href="/gt015n10/marking.html">GT015N10;Package:TOLL-8L;N-Channel Enhancement Mode Power MOSFET

          Description The GT015N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:938.65 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT015N10TLA

          絲印:GT015N10;Package:TOLL-8L;N-Channel Enhancement Mode Power MOSFET

          Description The GT015N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

          文件:963.5 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          GT016N10Q

          絲?。?a target="_blank" title="Marking" href="/gt016n10/marking.html">GT016N10;Package:TO-247;N-Channel Enhancement Mode Power MOSFET

          Description The GT016N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:974.73 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          技術(shù)參數(shù)

          • ID (A):

            10

          • RDS(typ) (mΩ):

            9.5

          • RDS(max) (mΩ):

            12

          • Vgs (V):

            44199

          • 封裝類型:

            SOP8

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          NSC
          24+
          PLCC-44P
          75
          詢價(jià)
          N/A
          24+/25+
          36
          原裝正品現(xiàn)貨庫存價(jià)優(yōu)
          詢價(jià)
          NS
          02+/03+
          PLCC44
          207
          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          NS
          22+
          PLCC44
          2000
          進(jìn)口原裝!現(xiàn)貨庫存
          詢價(jià)
          24+
          N/A
          69000
          一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
          詢價(jià)
          NK/南科功率
          2025+
          TO-263-2
          986966
          國產(chǎn)
          詢價(jià)
          NSC
          NEW
          PLCC-44P
          9823
          代理全系列銷售,全新原裝正品,價(jià)格優(yōu)勢,長期供應(yīng),量大可訂
          詢價(jià)
          Mitsubishi/三菱電機(jī)
          25+
          DIP
          11629
          原裝品質(zhì),專業(yè)護(hù)航,省心采購,就選橙椒科技!
          詢價(jià)
          ST/意法
          23+
          10000
          原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
          詢價(jià)
          ST/意法
          25+
          NA
          21
          全新原裝正品支持含稅
          詢價(jià)
          更多GT01供應(yīng)商 更新時(shí)間2026-1-20 16:30:00
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