33.0 dBm Power-LNA? Tuning Range: 0.1 – 2.7 GHz

Features Reference: 5V/300mA/1.95GHz ? Gain: 14.8 dB ? OP1dB: 33.2 dBm ? Drain Efficiency: 58 ? OIP3: 43.0 dBm ? Eval Board NF: 1.3 dB ? Flexible Bias Voltage and Current ? Process: GaAs pHEMT Applications ? High Efficiency Power Amplifier ? Multi-stage LNA ? Linear Driver

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GUERRILLA

High Power LNAs

The GRF5115 is a high linearity PA /Linear Driver with low noise figure (NF). It delivers excellent P1dB of almost 2 watts, IP3 and NF and is tunable from 100 MHz up to 2.7 GHz.(1)The device can be biased with Vdd over a range from 2.7 to 5.0 volts and Iddq can be adjusted for optimal linearity and Reference: 5V/300mA/1.85GHz\n? Gain: 14.4 dB\n? OP1dB: 32.8 dBm\n? OIP3: 47.6 dBm\n? Eval Board NF: 1.3 dB\n? Flexible Bias Voltage and Current\n? Process: GaAs pHEMT;

Guerrilla RF

Low voltage operation

文件：757.04 Kbytes 頁數(shù)：4 Pages

HOTCHIPHotchip Technology Co.,Ltd

華芯邦深圳市華芯邦科技有限公司

P-Channel Silicon Junction Field-Effect Transistor

P-Channel Silicon Junction Field-Effect Transistor ? Analog Switches

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INTERFET

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

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INTERSIL