LOW NOISE GAIN BLOCK 0.4 to 4.2 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Compact 1.5 x 1.5 mm DFN-6 Package Tested to AEC-Q100 Grade 2 100 Device Reflow at Assembly 100 Optical Die Inspection Reference: 5 V / 2332.5 MHz / 50 mA Gain: 17.8 dB OIP3: 33 dBm OP1dB: 22.5 dBm Evaluation Board Noise Fig

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GUERRILLA

High Linearity Gain Blocks

Reference: 5V/50 mA/2335.5MHz\n? Gain: 17.8 dB\n? EVB NF: 0.9 dB\n? OP1dB: 21 dBm\n? OIP3: 32 dBm @ +2 dBm POUT/tone?\n? Excellent Broadband Performance\n? Incorporates Optimized Tuning for the SDARS Band\n? AEC-Q100 Qualified for Automotive Applications\n? Flexible Biasing Provides Latitude for Lin;

Guerrilla RF

NAND GATES

DESCRIPTION The HCC4011B, HCC4012B and HCC4023B (extended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4011B, HCC/HCF40

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STMICROELECTRONICS

意法半導(dǎo)體

RadHardened high voltage complementary MOS logic series

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STMICROELECTRONICS

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Rad-hard high voltage CMOS logic series

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STMICROELECTRONICS

意法半導(dǎo)體