HIGH GAIN, X-Band LNA 8 to 12 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Compact 1.5 x 1.5 mm DFN-6 Package Reference: 5 V / 25 mA / 10 GHz Gain: 13.2 dB OIP3: 24 dBm OP1dB: 12.8 dBm Evaluation Board Noise Figure: 1.9 dB APPLICATIONS X-Band LNA Microwave Oscillator LO Buffer RFID Motion Detect

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GUERRILLA

High Gain, Ultra-Low Noise Amplifier;8.0 to 13.0 GHz

The GRF2710 is a high gain, low noise, linear amplifier designed for high performance 8.0 to 13.0 GHz applications. Over this frequency range, it exhibits excellent gain and compression point.\r\n\r\n The device is operated from a single positive supply of 3.0 to 8.0 V with a typical bias conditi ? Reference: 11.0 GHz; 5.0 volts/25 mA\r\n? Gain: 13.9 dB\r\n? OP1dB: 13.0 dBm\r\n? OIP3: 21.0 dBm\r\n? EVB Noise Figure: 2.1 dB\r\n? Internally Pre-Matched to 50 Ω\r\n? Process: GaAs pHEMT;

Guerrilla RF

GRAPHIC OPERATION TERMINAL GOT SIMPLESeries

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MITSUBISHI

三菱電機(jī)

GRAPHIC OPERATION TERMINAL GOT SIMPLESeries

文件：7.19548 Mbytes 頁(yè)數(shù)：252 Pages

MITSUBISHI

三菱電機(jī)

GRAPHIC OPERATION TERMINAL GOT SIMPLESeries

文件：7.19548 Mbytes 頁(yè)數(shù)：252 Pages

MITSUBISHI

三菱電機(jī)