Linear Gain Block with Bypass 0.15 to 6 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Single Control Logic Input Internally Matched to 50 Ω Compact 1.5 x 1.5 mm DFN-6 Package Reference: 5 V / 80 mA / 1.9 GHz Gain: 18.5 dB OP1dB: 22 dBm OIP3: 36 dBm Evaluation Board Noise Figure: 1.8 dB Bypass Mode Gain: -1.5

文件：1.75757 Mbytes 頁數(shù)：24 Pages

GUERRILLA

Broadband LNAs

Reference: 5V/80mA/1.9GHz\n? Gain: 18.4 dB\n? EVB NF: 1.6 dB\n? OIP3: 37.0 dBm\n? OP1dB: 22.0 dBm\n? Bypass Mode Gain: -1.5 dB\n? Bypass OP1dB: 25.0 dBm\n? Bypass OIP3: 46.0 dBm\n? Single Control Logic Input\n? Flexible Bias Voltage and Current\n? Internally Matched to 50 Ω\n? Process: GaAs pHEMT;

Guerrilla RF

Silicon N Channel Power MOS FET High Speed Power Switching

Features ? Low on-resistance ? Capable of 4 V gate drive ? Low drive current ? High density mounting

文件：55.61 Kbytes 頁數(shù)：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel Power MOS FET High Speed Power Switching

Features ? Low on-resistance ? Capable of 4 V gate drive ? Low drive current ? High density mounting

文件：55.61 Kbytes 頁數(shù)：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel Power MOS FET High Speed Power Switching

Features ? Low on-resistance ? Capable of 4 V gate drive ? Low drive current ? High density mounting

文件：95.38 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩