Linear Gain Block with Bypass 0.15 to 6 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Single Control Logic Input Internally Matched to 50 Ω Compact 1.5 x 1.5 mm DFN-6 Package Reference: 5 V / 80 mA / 1.7 GHz Gain: 15.5 dB OP1dB: 22 dBm OIP3: 38 dBm Evaluation Board Noise Figure: 2.1 dB Bypass Mode Gain: -1.6

文件：1.8727 Mbytes 頁(yè)數(shù)：23 Pages

GUERRILLA

High Linearity Gain Blocks

Reference: 5V/80mA/1700MHz\n? Gain: 15.0 dB\n? EVB NF: 2.3 dB\n? OIP3: 39.0 dBm\n? OP1dB: 22.0 dBm\n? Bypass Gain: -2.0 dB\n? Bypass OIP3: 42.5 dBm\n? Bypass OP1dB: 18.5 dBm\n? Single Control Logic Input\n? Flexible Bias Voltage and Current\n? Internally Matched to 50 Ω\n? Process: GaAs pHEMT;

Guerrilla RF

Easily removable swivel socket lid

文件：389.04 Kbytes 頁(yè)數(shù)：4 Pages

IRONWOOD

Silicon N Channel Power MOS FET High Speed Power Switching

Features ? Low on-resistance ? Capable of 2.5 V gate drive ? Low drive current ? High density mounting

文件：56.72 Kbytes 頁(yè)數(shù)：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel Power MOS FET High Speed Power Switching

Features ? Low on-resistance ? Capable of 2.5 V gate drive ? Low drive current ? High density mounting

文件：56.72 Kbytes 頁(yè)數(shù)：9 Pages

HITACHIHitachi Semiconductor

日立日立公司