絲?。?strong>GF7；Package：SOT-23-3；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

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DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gf7h60df/marking.html">GF7H60DF；Package：TO-220FP；Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：985.08 Kbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gf7nc60hd/marking.html">GF7NC60HD；Package：TO-220FP；N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT

General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER

文件：430.39 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gf7nc60hd/marking.html">GF7NC60HD；Package：TO-220FP；N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

GF BS88 Centre bolted tags

文件：152.84 Kbytes 頁數(shù)：3 Pages

COOPER

Circuit Protection Solutions Low Voltage Fuse Links Catalogue

文件：4.91849 Mbytes 頁數(shù)：55 Pages

COOPER

GF BS88 Centre bolted tags

文件：152.84 Kbytes 頁數(shù)：3 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

GF BS88 Centre bolted tags

文件：152.84 Kbytes 頁數(shù)：3 Pages

COOPER

N-CHANNEL 7A - 600V - TO-220FP PowerMESH TM IGBT

文件：257.57 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體