1200V/150A 4 in one-package

General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. Features ? NPT IGBT technology ? 10μs short circuit capability ? Low switching losses

文件：436.82 Kbytes 頁(yè)數(shù)：9 Pages

STARPOWER

斯達(dá)半導(dǎo)體

650V/150A 3-level in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features ? Low VCE(sat) Trench IGBT technology ? Low switching loss ? 6μs short circuit capability ? V

文件：581.86 Kbytes 頁(yè)數(shù)：11 Pages

STARPOWER

斯達(dá)半導(dǎo)體

1200V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features ? Low VCE(sat) Trench IGBT technology ? 8μs short circuit capability ? VCE(sat) with pos

文件：589.51 Kbytes 頁(yè)數(shù)：12 Pages

STARPOWER

斯達(dá)半導(dǎo)體

650V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features ? Low VCE(sat) Trench IGBT technology ? 6μs short circuit capability ? VCE(sat) with pos

文件：566.35 Kbytes 頁(yè)數(shù)：13 Pages

STARPOWER

斯達(dá)半導(dǎo)體

1200V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features ? Low VCE(sat) Trench IGBT technology ? 10μs short circuit capability ? VCE(sat) with po

文件：261.66 Kbytes 頁(yè)數(shù)：13 Pages

STARPOWER

斯達(dá)半導(dǎo)體

1200V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features ? Low VCE(sat) Trench IGBT technology ? 10μs short circuit capability ? VCE(sat) with po

文件：681.21 Kbytes 頁(yè)數(shù)：13 Pages

STARPOWER

斯達(dá)半導(dǎo)體

1200V IGBT模塊

額定電壓: 1200V\n額定電流: 150A\n電路結(jié)構(gòu): CL= Chopper Diode Low Side\n芯片系列: Y=Advanced Trench FS IGBT, Low Loss;

StarPower

斯達(dá)半導(dǎo)體

1200V IGBT模塊

額定電壓: 1200V\n額定電流: 150A\n電路結(jié)構(gòu): Chopper\n芯片系列: T Trench IGBT Medium Power;

StarPower

斯達(dá)半導(dǎo)體

1200V IGBT模塊

額定電壓: 1200V\n額定電流: 150A\n電路結(jié)構(gòu): CU=Chopper Diode Up Side\n芯片系列: Y=Advanced Trench FS IGBT, Low Loss;

StarPower

斯達(dá)半導(dǎo)體