Silicon & GaAs Schottky Diodes

Schottky Barrier devices are currently available in single beamlead dual 'T' ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency broadband

Microchip

微芯科技

Schottky Barrier Diodes TM For Mixers and Detectors

DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest fre

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MICROSEMI

美高森美

Package：3-SMD，扁平引線；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 二極管 - 射頻 描述：SI SCHOTTKY NON HERMETIC MICROST

MICROCHIP

微芯科技

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：263.21 Kbytes 頁數(shù)：4 Pages

GTM

勤益投資控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：276.54 Kbytes 頁數(shù)：4 Pages

GTM

勤益投資控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features * Low on-resistance * Capable of 2.5V gate drive * Optimal DC/DC battery application * Surface mount package

文件：274.26 Kbytes 頁數(shù)：4 Pages

GTM

勤益投資控股