絲?。?strong>GA2；Package：X1-DFN1612-8；4 CHANNEL 300mA HIGH PSRR LOW NOISE LDO WITH ENABLE

Features - Low VDD and Wide VDD Range: 1.7V to 5.25V - Each Channel Output Current: 300mA - VOUT Accuracy ±1 - Ripple Rejection 75dB at 1kHz - Low Output Noise, 60μVrms from 10Hz to 100kHz - Total 4 Channel Quiescent Current is Typically 160μA - VOUT Fixed 1.2V to 3.6V - Totally Lead-Free

文件：1.35145 Mbytes 頁數(shù)：15 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>GA2；Package：SOT23；ADJUSTABLE PRECISION SHUNT REGULATORS

Description The AZ431-A is a three-terminal adjustable shunt regulator with guaranteed thermal stability over a full operation range. It features sharp turn-on characteristics, low temperature coefficient and low output impedance, which make it ideal substitute for Zener diode in applications suc

文件：565.33 Kbytes 頁數(shù)：19 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>GA2；Package：uSiP；TPSM8282x 1-A, 2-A, and 3-A High Efficiency Step-Down Converter MicroSiP??Power Module with Integrated Inductor

文件：3.98589 Mbytes 頁數(shù)：39 Pages

TI

德州儀器

絲印：GA2；Package：uSiP；TPSM8282x 1-A, 2-A, and 3-A High Efficiency Step-Down Converter MicroSiP??Power Module with Integrated Inductor

文件：4.75241 Mbytes 頁數(shù)：44 Pages

TI

德州儀器

絲?。?strong>GA2；Package：uSiP；TPSM8282x, TPSM8282xA 1-A, 2-A, and 3-A High Efficiency Step-Down Converter MicroSiP??Power Module with Integrated Inductor

文件：6.19472 Mbytes 頁數(shù)：54 Pages

TI

德州儀器

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 頁數(shù)：3 Pages

MICROSEMI

美高森美

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 頁數(shù)：3 Pages

MICROSEMI

美高森美

HALF-BRIDGE IGBT INT-A-PAK

Features ? Generation 4 IGBT Technology ? Standard speed: optimized for hard switching operating frequencies up to 1000 Hz ? Very Low Conduction Losses ? Industry standard package Benefits ? Increased operating efficiency ? Direct mounting to heatsink ? Performance optimi

文件：101.73 Kbytes 頁數(shù)：6 Pages

IRF

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

Features ? Generation 4 IGBT Technology ? Standard speed: optimized for hard switching operating frequencies up to 1000 Hz ? Very Low Conduction Losses ? Industry standard package Benefits ? Increased operating efficiency ? Direct mounting to heatsink ? Performance optimi

文件：67.2 Kbytes 頁數(shù)：6 Pages

IRF

Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A

FEATURES ? Generation 4 IGBT technology ? Standard: Optimized for hard switching speed DC to 1 kHz ? Very low conduction losses ? Industry standard package ? UL approved file E78996 ? Compliant to RoHS directive 2002/95/EC ? Designed and qualified for industrial level BENEFITS ? Increased

文件：128.53 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司