絲印：g86；Package：SOT753；2-input EXCLUSIVE-OR gate

1. General description XC7SET86 is a high-speed Si-gate CMOS device. It provides a 2-input EXCLUSIVE-OR function. 2. Features and benefits ? Symmetrical output impedance ? High noise immunity ? Low power dissipation ? TTL input levels ? Balanced propagation delays ? ESD protection: ? HBM

文件：199.68 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/g86n06/marking.html">G86N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G86N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.040119 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g86n06/marking.html">G86N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G86N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：941.26 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g86n06/marking.html">G86N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G86N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.040119 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g86n06/marking.html">G86N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G86N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：941.26 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

InGaAs PIN photodiode

Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrical

文件：247.62 Kbytes 頁數(shù)：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學株式會社

InGaAs PIN photodiode

Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrical

文件：247.62 Kbytes 頁數(shù)：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學株式會社

InGaAs PIN photodiode

Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrical

文件：247.62 Kbytes 頁數(shù)：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學株式會社

InGaAs PIN photodiode

Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrical

文件：247.62 Kbytes 頁數(shù)：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學株式會社

InGaAs PIN photodiode

Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrical

文件：247.62 Kbytes 頁數(shù)：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學株式會社