Silicon Power Rectifiers

Edal Series G power rectifiers are stud mounted DO-8 packages. Because the silicon junction is carefully fitted within a glass-to-metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions. The series G power rectifiers

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EDAL

PDP TRENCH IGBT

Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperatur

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IRF

PDP TRENCH IGBT

Description\nThis IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature ? Advanced Trench IGBT Technology\n? Optimized for Sustain and Energy Recovery\n?? circuits in PDP applications\n? Low VCE(on) and Energy per Pulse (EPULSE?)\n?? for improved panel efficiency\n? High repetitive peak current capability\n? Lead Free package;

Infineon

英飛凌

Sub miniature package: 2.0 x 1.6 x 1.0 mm Frequency from 0.75 MHz up to 80 MHz

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QUARTZCOM

N-CHANNEL MOSFET

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CYSTEKEC

全宇昕科技

Round pushbutton switch, 5 million cycles, optional LED

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APEX-ELECTRONICS