絲印：G75；Package：VSSOP；LM4875 750 mW Audio Power Amplifier with DC Volume Control and Headphone Switch

1FEATURES 2? Precision DC Voltage Volume Control ? Headphone Amplifier Mode ? “Click and Pop” Suppression ? Shutdown Control When Volume Control Pin Is Low ? Thermal Shutdown Protection APPLICATIONS ? GSM Phones and Accessories, DECT, Office Phones ? Hand Held Radio ? Other Portable A

文件：1.21729 Mbytes 頁數(shù)：27 Pages

TI

德州儀器

絲?。?strong>G75；Package：VSSOP；LM4875 750 mW Audio Power Amplifier with DC Volume Control and Headphone Switch

1FEATURES 2? Precision DC Voltage Volume Control ? Headphone Amplifier Mode ? “Click and Pop” Suppression ? Shutdown Control When Volume Control Pin Is Low ? Thermal Shutdown Protection APPLICATIONS ? GSM Phones and Accessories, DECT, Office Phones ? Hand Held Radio ? Other Portable A

文件：1.21729 Mbytes 頁數(shù)：27 Pages

TI

德州儀器

絲?。?strong>G75；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲?。?a target="_blank" title="Marking" href="/g75t65mqdc50/marking.html">G75T65MQDC50；Package：TO-247-4LD；IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 75 A

Using the novel field stop 4th generation IGBT technology and generation 1.5 SiC Schottky Diode technology in TO?247 4?lead package, FGH4L75T65MQDC50 offers the optimum performance with both low conduction and switching losses for high?efficiency operations in various applications, especially

文件：313.4 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/g75p04/marking.html">G75P04；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G75P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：896.68 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g75p04/marking.html">G75P04；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G75P04D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01986 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g75p04/marking.html">G75P04；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G75P04F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：681.49 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲印：G75P04I；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G75P04FI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：667.89 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g75p04/marking.html">G75P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G75P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：625.28 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲印：G75P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G75P04KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：900.7 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體