絲?。?strong>G50；Package：MLF-62x2；500mA-Peak Output LDO Regulator

文件：405.21 Kbytes 頁(yè)數(shù)：14 Pages

MICREL

麥瑞半導(dǎo)體

絲印：G50T65AK5SD；Package：TO-247；Trench FS technology, positive temperature coefficient;

Features ● Trench FS technology, positive temperature coefficient ● Low on-state voltage drop: VCE(sat) TYP = 1.40V @ IC = 50A, VGE = 15V ● Low turn-off loss Applications ● UPS ● Photovoltaic Inverter ● Charging Station

文件：958.65 Kbytes 頁(yè)數(shù)：10 Pages

CRMICRO

華潤(rùn)微電子

絲印：G50T65MQDC50；Package：TO-247-4LD；IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 50 A

Using the novel field stop 4th generation IGBT technology and generation 1.5 SiC Schottky Diode technology in TO?247 4?lead package, FGH4L50T65MQDC50 offers the optimum performance with both low conduction and switching losses for high?efficiency operations in various applications, especially

文件：311.41 Kbytes 頁(yè)數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g500p03e/marking.html">G500P03E；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G500P03IE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：824.95 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g500p03/marking.html">G500P03；Package：SOT-23-6L；P-Channel Enhancement Mode Power MOSFET

Description The G500P03LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：564.9 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G50N03；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G50N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：991.38 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g50n03/marking.html">G50N03；Package：TO-251；N-Channel Enhancement Mode Power MOSFET

Description The G50N03J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ? Power switch DC/DC converters

文件：783.56 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G50N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：541.12 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g50n03/marking.html">G50N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G50N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：925.2 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g50eh5/marking.html">G50EH5；Package：PG-TO247-3；Highspeed5IGBTinTRENCHSTOPTM5technology

FeaturesandBenefits: HighspeedH5technologyoffering ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?PlugandplayreplacementofpreviousgenerationIGBTs ?650Vbreakdownvoltage ?LowQG ?Maximumjunctiontemperature175°C ?QualifiedaccordingtoJEDECfortargetapplications ?Pb-freeleadplati

文件：2.00184 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

英飛凌