INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Short Circuit Rated UltraFast IGBT Features ? High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? tighter parameter distribution and higher efficiency than previous generations

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-

文件：234.03 Kbytes 頁數(shù)：10 Pages

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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

Features ?Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications ?Industry-benchmark switching losses improve efficiency of all power supply topologies ?50 reduction of Eoff parameter ?Low IGBT conduction losses ?Latest-generation IGBT design

文件：139.38 Kbytes 頁數(shù)：8 Pages

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INSULATED GATE BIPOLAR TRANSISTOR

文件：275.6 Kbytes 頁數(shù)：9 Pages

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