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          首頁 >G35>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          G35

          Express Chipset

          文件:2.481 Mbytes 頁數(shù):351 Pages

          INTEL

          英特爾

          G350N06D32

          絲?。?a target="_blank" title="Marking" href="/g350n06d/marking.html">G350N06D;Package:DFN3X3-8LDUAL;DUAL N-Channel Enhancement Mode Power MOSFET

          Description The G350N06D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:825.62 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導體

          G350P02LLE

          絲?。?a target="_blank" title="Marking" href="/g350p02/marking.html">G350P02;Package:SOT-23-6;P-Channel Enhancement Mode Power MOSFET

          Description The G350P02LLE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:890.23 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導體

          G350P02LLEA

          絲?。?a target="_blank" title="Marking" href="/g350p02/marking.html">G350P02;Package:SOT-23-6;P-Channel Enhancement Mode Power MOSFET

          Description The G350P02LLEA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

          文件:1.08936 Mbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導體

          G35160

          35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE

          Features ● Glass Passivated Die Construction ● Low Leakage ● Low Forward Voltage ● High Surge Current Capability ● Die Size 160mil SQ

          文件:30.68 Kbytes 頁數(shù):2 Pages

          WTE

          Won-Top Electronics

          G35N02K

          絲?。?a target="_blank" title="Marking" href="/g35n02/marking.html">G35N02;Package:TO-252;N-Channel Enhancement Mode Power MOSFET

          Description The G35N02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:892.4 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導體

          G35N02S

          絲?。?a target="_blank" title="Marking" href="/g35n02/marking.html">G35N02;Package:SOP-8;N-Channel Enhancement Mode Power MOSFET

          Description The G35N02S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:694.91 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導體

          G35P04D5

          絲?。?a target="_blank" title="Marking" href="/g35p04/marking.html">G35P04;Package:DFN5X6-8L;P-Channel Enhancement Mode Power MOSFET

          Description The G35P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:851.92 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導體

          G350B-N

          Fluid chilled or hot water, up to 60 glycol

          文件:945.03 Kbytes 頁數(shù):4 Pages

          BELIMO

          G353

          Multipurpose Enclosures

          文件:226.25 Kbytes 頁數(shù):1 Pages

          MULTICOMP

          易絡(luò)盟

          晶體管資料

          • 型號:

            G35

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

          • 性質(zhì):

            射頻/高頻放大 (HF)_靜噪放大 (LN)_寬頻帶放大

          • 封裝形式:

          • 極限工作電壓:

          • 最大電流允許值:

            0.15A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

          • 可代換的型號:

          • 最大耗散功率:

            0.15W

          • 放大倍數(shù):

          • 圖片代號:

            NO

          • vtest:

            0

          • htest:

            999900

          • atest:

            0.15

          • wtest:

            0.15

          技術(shù)參數(shù)

          • Package:

            SOT-23-6L

          • Type:

            P

          • ESD Diode:

            YES

          • Vds(V):

            -20

          • Vgs(V):

            ±10

          • Id(A):

            -4.5

          • Pd(W):

            1.4

          • Vgs(th)max(V):

            -1

          • Rds(on)mΩ(typ)@Vgs=4.5V:

            27

          • Rds(on)mΩ(typ)@Vgs=2.5V:

            35

          • Rds(on)mΩ(max)@Vgs=4.5V:

            35

          • Rds(on)mΩ(max)@Vgs=2.5V:

            45

          • Qg(nC):

            17.2

          • Qgs(nC):

            1.3

          • Qgd(nC):

            4.5

          • Ciss(pF):

            1126

          • Crss(pF):

            118

          • Technology:

            TRENCH

          供應(yīng)商型號品牌批號封裝庫存備注價格
          GMT
          17+
          QFN
          6200
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          詢價
          TOKO
          24+/25+
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          詢價
          TOKO
          2016+
          SMD
          1933
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          SUNMATE(森美特)
          2019+ROHS
          DO-214AB(SMC)
          66688
          森美特高品質(zhì)產(chǎn)品原裝正品免費送樣
          詢價
          MILITARY
          2
          全新原裝 貨期兩周
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          TOKO
          23+
          NA
          1468
          專做原裝正品,假一罰百!
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          GMT
          24+
          QFN32
          20000
          全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅??!
          詢價
          NVIDIA
          20+
          BGA
          35830
          原裝優(yōu)勢主營型號-可開原型號增稅票
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          GMT/致新
          24+
          TQFN4X432L
          30000
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          更多G35供應(yīng)商 更新時間2026-1-19 16:01:00
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