| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
75A, 1200V, NPT Series N-Channel IGBT The HGTG30N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bip 文件：113.21 Kbytes 頁(yè)數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
600V, SMPS Series N-Channel IGBT The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been 文件：178.25 Kbytes 頁(yè)數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel 文件：221.78 Kbytes 頁(yè)數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel 文件：144.62 Kbytes 頁(yè)數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
600V, SMPS Series N-Channel IGBT with The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderat 文件：191.86 Kbytes 頁(yè)數(shù)：9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel 文件：116.91 Kbytes 頁(yè)數(shù)：7 Pages | INTERSIL | INTERSIL | ||
60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel 文件：105.22 Kbytes 頁(yè)數(shù)：7 Pages | INTERSIL | INTERSIL | ||
600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel 文件：92.78 Kbytes 頁(yè)數(shù)：8 Pages | INTERSIL | INTERSIL | ||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar 文件：100.45 Kbytes 頁(yè)數(shù)：9 Pages | INTERSIL | INTERSIL | ||
600V, SMPS Series N-Channel IGBT The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been 文件：178.25 Kbytes 頁(yè)數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
射頻/高頻放大 （HF）_靜噪放大 （LN）_寬頻帶放大
- 封裝形式：
直插封裝
- 極限工作電壓：
- 最大電流允許值：
0.15A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號(hào)：
- 最大耗散功率：
0.2W
- 放大倍數(shù)：
- 圖片代號(hào)：
A-43
- vtest：
0
- htest：
999900
- atest：
0.15
- wtest：
0.2
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
G30
- 制造商：
XP Power
- 類別：
電源 - 板安裝 > 直流轉(zhuǎn)換器
- 系列：
XP EMCO - G (1.5W)
- 包裝：
管件
- 類型：
高電壓 - 隔離模塊
- 電壓 - 輸入（最小值）：
0.7V
- 電壓 - 輸入（最大值）：
12V
- 電壓 - 輸出 1：
3000V
- 電流 - 輸出（最大值）：
500μA
- 應(yīng)用：
ITE（商業(yè)）
- 特性：
比例輸出
- 工作溫度：
-10°C ~ 60°C
- 安裝類型：
通孔
- 封裝/外殼：
4-DIP 模塊
- 大小 / 尺寸：
1.50" 長(zhǎng) x 1.50" 寬 x 0.63" 高（38.1mm x 38.1mm
- 描述：
DC DC CONVERTER 3000V 1.5W
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
QFN |
250 |
詢價(jià) | ||||
MICREL |
05/06+ |
QFN6 |
683 |
全新原裝100真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
10 |
優(yōu)勢(shì)庫(kù)存,全新原裝 |
詢價(jià) | |||||
XP Power |
25+ |
N/A |
12000 |
一級(jí)代理保證進(jìn)口原裝正品假一罰十價(jià)格合理 |
詢價(jià) | ||
TELIT |
2022+ |
600 |
全新原裝 貨期兩周 |
詢價(jià) | |||
TELIT |
21+ |
SMD |
1062 |
只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢! |
詢價(jià) | ||
TELIT |
25+ |
18 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中! |
詢價(jià) | |||
M/A-COM Technology Solutions |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
MACOM |
23+ |
NA |
25000 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
國(guó)產(chǎn) |
詢價(jià) |
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