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          首頁(yè) >G2N>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          G2N65K

          絲?。?a target="_blank" title="Marking" href="/g2n65/marking.html">G2N65;Package:TO-252;N-Channel Enhancement Mode Power MOSFET

          Description This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. Application l Power switch l DC/DC converters

          文件:643.85 Kbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G2N3904

          The G2N3904 is designed for general purpose switching and amplifier applications.

          文件:131.64 Kbytes 頁(yè)數(shù):2 Pages

          ETL

          亞歷電子

          G2N3904

          NPN EPITAXIAL PLANAR TRANSISTOR

          文件:129.72 Kbytes 頁(yè)數(shù):2 Pages

          GTM

          勤益投資控股

          G2N3906

          The G2N3906 is designed for general purpose switching and amplifier applications

          文件:206.66 Kbytes 頁(yè)數(shù):1 Pages

          ETL

          亞歷電子

          G2N3906

          PNP EPITAXIAL PLANAR TRANSISTOR

          文件:200.26 Kbytes 頁(yè)數(shù):2 Pages

          GTM

          勤益投資控股

          G2N4401

          The G2N4401 is designed for general purpose switching and amplifier applications.

          文件:132.46 Kbytes 頁(yè)數(shù):2 Pages

          ETL

          亞歷電子

          G2N4401

          NPN EPITAXIAL PLANAR TRANSISTOR

          文件:130.8 Kbytes 頁(yè)數(shù):2 Pages

          GTM

          勤益投資控股

          G2N4403

          PNP EPITAXIAL PLANAR TRANSISTOR

          文件:112.07 Kbytes 頁(yè)數(shù):2 Pages

          GTM

          勤益投資控股

          G2N4403

          The G2N4403 is designed for general purpose switching and amplifier applications.

          文件:113.71 Kbytes 頁(yè)數(shù):2 Pages

          ETL

          亞歷電子

          G2N5401

          PNP EPITAXIAL PLANAR TRANSISTOR

          文件:147.64 Kbytes 頁(yè)數(shù):3 Pages

          GTM

          勤益投資控股

          技術(shù)參數(shù)

          • Package:

            TO-252

          • Type:

            N

          • ESD Diode:

            NO

          • Vds(V):

            650

          • Vgs(V):

            ±30

          • Id(A):

            2

          • Pd(W):

            35

          • Vgs(th)max(V):

            4

          • Rds(on)mΩ(typ)@Vgs=10V:

            4100

          • Rds(on)mΩ(max)@Vgs=10V:

            5000

          • Qg(nC):

            8

          • Qgs(nC):

            2

          • Qgd(nC):

            3

          • Ciss(pF):

            250

          • Crss(pF):

            0.1

          • Technology:

            PLANAR

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          更多G2N供應(yīng)商 更新時(shí)間2026-1-19 14:15:00
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