絲?。?strong>G2J；GaAs INTEGRATED CIRCUIT

FEATURES ? Low insertion loss : LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz LINS = 0.45 dB TYP. @ Vcont = 1.8 V/0 V, f = 2.5 GHz ? High isolation : ISL = 29 dB TYP. @ Vcont = 1.8 V/0 V, f = 2 GHz ISL = 25 dB TYP. @ Vcont = 1.8 V/0 V, f = 2.5 GHz ? 6-pin super minimold package (2.0 ′ 1.2

文件：233.05 Kbytes 頁數(shù)：14 Pages

RENESAS

瑞薩

絲印：G2J；SURFACE MOUNT SILICON RECTIFIERS

文件：85.2 Kbytes 頁數(shù)：3 Pages

MIC

昌福電子

絲印：G2JF；Package：SMAF；Surface Mount Tension Resolution G2AF Through G2MF

FEATURES ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.55975 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

絲?。?strong>G2J；SURFACE MOUNT SILICON RECTIFIERS

文件：85.2 Kbytes 頁數(shù)：3 Pages

MIC

昌福電子

絲?。?a target="_blank" title="Marking" href="/g2jf/marking.html">G2JF；Package：SMAF；Surface Mount Tension Resolution G2AF Through G2MF

FEATURES ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.55975 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes FEATURES ? High temperature metallurgically bonded construction ? Glass passivated cavity-free junction ? Hermetically sealed package 2.0 Ampere operation at TA=75°C with no thermal runaway ? Typical IR less than 0.1μA ? Ca

文件：52.46 Kbytes 頁數(shù)：2 Pages

GE