| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：G2553Q1；Package：TSSOP；MSP430G2x53 Automotive Mixed-Signal Microcontrollers 1 Features 1? Qualified for Automotive Applications ? Low Supply-Voltage Range: 1.8 V to 3.6 V ? Ultra-Low-Power Consumption – Active Mode: 230 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wakeup From Standby Mode in Le 文件：965.22 Kbytes 頁數(shù)：71 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/g2553q1/marking.html">G2553Q1；Package：TSSOP；MSP430G2x53 Automotive Mixed-Signal Microcontrollers 1 Features 1? Qualified for Automotive Applications ? Low Supply-Voltage Range: 1.8 V to 3.6 V ? Ultra-Low-Power Consumption – Active Mode: 230 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wakeup From Standby Mode in Le 文件：965.22 Kbytes 頁數(shù)：71 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/g25h120df2/marking.html">G25H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency conve 文件：737.22 Kbytes 頁數(shù)：17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/g25m120df3/marking.html">G25M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 25 A low loss Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability 文件：1.05112 Mbytes 頁數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/g25s120df3/marking.html">G25S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 25 A low drop Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coeffici 文件：703.28 Kbytes 頁數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/g25h120df2/marking.html">G25H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency conve 文件：737.22 Kbytes 頁數(shù)：17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/g25m120df3/marking.html">G25M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 25 A low loss Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability 文件：1.05112 Mbytes 頁數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/g25s120df3/marking.html">G25S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 25 A low drop Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coeffici 文件：703.28 Kbytes 頁數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Integrated PMIC for LCD | GMT 致新科技 | GMT | ||
G2506系列 SOT23-5 封裝的通用型高效DC降壓IC 具有1.8V 3.3v ADJ等多種輸出電壓規(guī)格 | YuCan 昱燦 | YuCan |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
射頻/高頻放大 （HF）_寬頻帶放大 （A）_開關(guān)管 （S
- 封裝形式：
貼片封裝
- 極限工作電壓：
- 最大電流允許值：
0.5A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
6
- 可代換的型號：
- 最大耗散功率：
0.5W
- 放大倍數(shù)：
- 圖片代號：
G-206
- vtest：
0
- htest：
999900
- atest：
0.5
- wtest：
0.5
產(chǎn)品屬性
- 產(chǎn)品編號：
G25
- 制造商：
XP Power
- 類別：
電源 - 板安裝 > 直流轉(zhuǎn)換器
- 系列：
XP EMCO - G (1.5W)
- 包裝：
管件
- 類型：
高電壓 - 隔離模塊
- 電壓 - 輸入（最小值）：
0.7V
- 電壓 - 輸入（最大值）：
12V
- 電壓 - 輸出 1：
2500V
- 電流 - 輸出（最大值）：
600μA
- 應(yīng)用：
ITE（商業(yè)）
- 特性：
比例輸出
- 工作溫度：
-10°C ~ 60°C
- 安裝類型：
通孔
- 封裝/外殼：
4-DIP 模塊
- 大小 / 尺寸：
1.50" 長 x 1.50" 寬 x 0.63" 高（38.1mm x 38.1mm
- 描述：
DC DC CONVERTER 2500V 1.5W
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
XP Power |
25+ |
全新-電源模塊 |
17771 |
DC-DC轉(zhuǎn)換器電源模塊G25交期短價格優(yōu)#即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價 | ||
XP Power |
25+ |
N/A |
12000 |
一級代理保證進(jìn)口原裝正品假一罰十價格合理 |
詢價 | ||
NEC |
23+ |
30000 |
現(xiàn)貨庫存 |
詢價 | |||
24+ |
N/A |
82000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
仙童 |
06+ |
TO-247 |
600 |
自己公司全新庫存絕對有貨 |
詢價 | ||
PHI |
24+ |
DIP20 |
15 |
詢價 | |||
FAIRCHILD |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
FSC |
17+ |
TO-3P |
6200 |
詢價 | |||
FSC |
2015+ |
TO-247 |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
Infineon |
24+ |
TO-247 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 |
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