絲印：G23；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2158 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158 is suitable for use in low-voltage portabl

文件：266 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

絲?。?strong>G23；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in lowvoltage portable s

文件：258.839 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

絲?。?strong>G23；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in lowvoltage portable s

文件：258.839 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

絲?。?strong>G23；Package：SMB；25 V, 2 A low drop power Schottky rectifier

Features ? Very low forward voltage drop for less power dissipation ? Optimized conduction/reverse losses trade-off which means the highest efficiency in the applications ? Avalanche rated ? ECOPACK2 compliant

文件：326.77 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：G23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE MOSFET

文件：165.18 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g2304/marking.html">G2304；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G2304 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：814.08 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G2304；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G2304A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.00857 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g2305/marking.html">G2305；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G2305 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：820.68 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g2305/marking.html">G2305；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01209 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G230EP；Package：SOIC；MIXED SIGNAL MICROCONTROLLER

1FEATURES 2? Low Supply Voltage Range: 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture

文件：671.89 Kbytes 頁數(shù)：41 Pages

TI

德州儀器