Silicon Z??iodes

FEATURES ? High reliability ? Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads ? Wave and reflow solderable ? Glass passivated junction

文件：1.98202 Mbytes 頁數(shù)：3 Pages

TAYCHIPST

泰迪斯電子

Single Pole Single Throw - Normally Open

FEATURES Tungsten contacts for better load switching performance** Vacuum dielectric allows for make and/or break load switching Mounting options in any axis Threaded HV connections means easy installation

文件：119.33 Kbytes 頁數(shù)：2 Pages

SENSATA

森薩塔

絲?。?strong>G22；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and

文件：261.23 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

絲?。?strong>G22；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲印：G22；Package：SMB；Power Schottky diode

文件：259.99 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

Silicon Z??iodes

FEATURES ? High reliability ? Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads ? Wave and reflow solderable ? Glass passivated junction

文件：1.98202 Mbytes 頁數(shù)：3 Pages

TAYCHIPST

泰迪斯電子

SIDACs

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts

文件：84.13 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

SIDACs

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts

文件：26.44 Kbytes 頁數(shù)：1 Pages

EIC

Ultra320 Multi-mode LVD/SE SCSI Terminator

General Description The G220 Multi-mode LVD/SE SCSI terminator provides a smooth transition into the next generation of the SCSI Parallel Interface (SPI-4). It automatically senses the bus, via DIFFSENS, and switches the termination to either single-ended (SE) or low voltage differential (LVD) SC

文件：193.76 Kbytes 頁數(shù)：9 Pages

GMT

致新科技

RF POWER GAN TRANSISTOR

General Description Polyfets GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down

文件：47.46 Kbytes 頁數(shù)：2 Pages

POLYFET