絲印：G22；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and

文件：261.23 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

絲?。?strong>G22；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲印：G22；Package：SMB；Power Schottky diode

文件：259.99 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g220p02/marking.html">G220P02；Package：DFN2/2-6L；P-Channel Enhancement Mode Power MOSFET

Description The G220P02D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：817.54 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g220p03d/marking.html">G220P03D；Package：DFN3X3-8LDUAL；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G220P03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：709.35 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g220p03d/marking.html">G220P03D；Package：SOP-8DUAL；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G220P03S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：836.51 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G2202；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23? Low Supply Voltage Range: 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architectur

文件：1.8245 Mbytes 頁數(shù)：75 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/g2202/marking.html">G2202；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23? Low Supply Voltage Range: 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architectur

文件：1.8245 Mbytes 頁數(shù)：75 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/g2202/marking.html">G2202；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23? Low Supply Voltage Range: 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architectur

文件：1.8245 Mbytes 頁數(shù)：75 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/g2202/marking.html">G2202；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23? Low Supply Voltage Range: 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architectur

文件：1.8245 Mbytes 頁數(shù)：75 Pages

TI

德州儀器