| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/g2009g/marking.html">G2009G；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description The G2009G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：643.17 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g200n06/marking.html">G200N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description The G200N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：831.95 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g200n10/marking.html">G200N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description The G200N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：920.07 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲印：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET Description The G200P04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：631.57 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g200p04/marking.html">G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET Description The G200P04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：871.86 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲印：G200P04S2；Package：SOP-8DUAL；Dual P-Channel Enhancement Mode Power MOSFET Description The G200P04S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：884.2 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
terminations and adapt ers 文件：165.14 Kbytes 頁數(shù)：2 Pages | LITTELFUSE 力特 | LITTELFUSE | ||
Rubber Push-In Bumpers 文件：120.08 Kbytes 頁數(shù)：1 Pages | HEYCO | HEYCO | ||
All Dimension In MM 文件：97.94 Kbytes 頁數(shù)：1 Pages | E-SWITCH | E-SWITCH | ||
All Dimension In MM 文件：62.88 Kbytes 頁數(shù)：1 Pages | E-SWITCH | E-SWITCH |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
開關(guān)管 （SW）
- 封裝形式：
直插封裝
- 極限工作電壓：
- 最大電流允許值：
3A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
1.5W
- 放大倍數(shù)：
- 圖片代號：
A-100
- vtest：
0
- htest：
999900
- atest：
3
- wtest：
1.5
技術(shù)參數(shù)
- VCC (V)max.：
6
- VM (V)min.：
2.9
- VM (V)max.：
5.5
- CH：
6+1
- Build-inPI：
3
- ExteriorControl：
Y(CH5~6)
- SerialControl：
Y
- Note：
CH12 & CH34
- Package：
TQFN5X5-40
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
WESTCODE |
23+ |
模塊 |
900 |
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢! |
詢價 | ||
GM |
24+ |
QFP100 |
1320 |
詢價 | |||
16+ |
QFP |
960 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | |||
NVIDIA |
08+ |
BGA |
1 |
詢價 | |||
Qrasgal |
23+ |
QFP100 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
MNC |
2016+ |
DIP20 |
8850 |
只做原裝,假一罰十,公司專營變壓器,濾波器! |
詢價 | ||
GF |
17+ |
TO-251 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
GMT |
24+ |
QFN |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
OKIndustries |
新 |
11 |
全新原裝 貨期兩周 |
詢價 | |||
GF |
24+ |
TO-251 |
2720 |
原廠/代理渠道價格優(yōu)勢 |
詢價 |
相關(guān)規(guī)格書
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- NE5532
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- NE5532
- NE5532
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- SI7970DP
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- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
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- TD62308
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- GRM21BR71H104JA11#
- TL074
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