| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/g20n06/marking.html">G20N06;Package:DFN5/6-8LDual;N-Channel Enhancement Mode Power MOSFET Description The G20N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:987.28 Kbytes 頁數(shù):6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has 文件:121.05 Kbytes 頁數(shù):8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has 文件:93.09 Kbytes 頁數(shù):7 Pages | INTERSIL | INTERSIL | ||
45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction los 文件:97.79 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
63A, 1200V, NPT Series N-Channel IGBT 63A, 1200V, NPT Series N-Channel IGBT The HGTG20N120CN is aNon-PunchThrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET a 文件:83.76 Kbytes 頁數(shù):7 Pages | INTERSIL | INTERSIL | ||
34A, 1200V N-Channel IGBT Description The HGTG20N120E2 is a MOS gated, high voltage switch ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop vari 文件:167.55 Kbytes 頁數(shù):5 Pages | INTERSIL | INTERSIL | ||
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel 文件:179.52 Kbytes 頁數(shù):7 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel 文件:179.52 Kbytes 頁數(shù):7 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately 文件:144.01 Kbytes 頁數(shù):8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
High Speed IGBT in NPT-technology High Speed IGBT in NPT-technology ? 30 lower Eoff compared to previous generation ? Short circuit withstand time – 10 μs ? Designed for operation above 30 kHz ? NPT-Technology for 600V applications offers: ?? - parallel switching capability ?? - moderate Eoff increase with temperature ?? - 文件:426.22 Kbytes 頁數(shù):11 Pages | INFINEON 英飛凌 | INFINEON |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
- 性質(zhì):
射頻/高頻放大 (HF)_靜噪放大 (LN)_寬頻帶放大
- 封裝形式:
直插封裝
- 極限工作電壓:
- 最大電流允許值:
0.1A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
3
- 可代換的型號:
- 最大耗散功率:
0.625W
- 放大倍數(shù):
- 圖片代號:
A-11
- vtest:
0
- htest:
999900
- atest:
0.1
- wtest:
0.625
技術(shù)參數(shù)
- VCC (V)max.:
6
- VM (V)min.:
2.9
- VM (V)max.:
5.5
- CH:
6+1
- Build-inPI:
3
- ExteriorControl:
Y(CH5~6)
- SerialControl:
Y
- Note:
CH12 & CH34
- Package:
TQFN5X5-40
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
XP Power |
25+ |
N/A |
12000 |
一級代理保證進(jìn)口原裝正品假一罰十價(jià)格合理 |
詢價(jià) | ||
FCS |
25+ |
TO-3P |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
WESTCODE |
23+ |
模塊 |
900 |
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢! |
詢價(jià) | ||
哈里斯 |
06+ |
TO-247 |
3500 |
原裝 |
詢價(jià) | ||
H |
24+ |
TO247 |
3000 |
詢價(jià) | |||
VISHAY |
24+/25+ |
343 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
NVIDIA |
08+ |
BGA |
1 |
詢價(jià) | |||
INF |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
MNC |
2016+ |
DIP20 |
8850 |
只做原裝,假一罰十,公司專營變壓器,濾波器! |
詢價(jià) | ||
原廠 |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
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