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          首頁 >G20>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          G20N06D52

          絲?。?a target="_blank" title="Marking" href="/g20n06/marking.html">G20N06;Package:DFN5/6-8LDual;N-Channel Enhancement Mode Power MOSFET

          Description The G20N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:987.28 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G20N120

          63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

          63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

          文件:121.05 Kbytes 頁數(shù):8 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          G20N120

          63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

          63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

          文件:93.09 Kbytes 頁數(shù):7 Pages

          INTERSIL

          G20N120

          45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

          45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction los

          文件:97.79 Kbytes 頁數(shù):8 Pages

          INTERSIL

          G20N120

          63A, 1200V, NPT Series N-Channel IGBT

          63A, 1200V, NPT Series N-Channel IGBT The HGTG20N120CN is aNon-PunchThrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET a

          文件:83.76 Kbytes 頁數(shù):7 Pages

          INTERSIL

          G20N120

          34A, 1200V N-Channel IGBT

          Description The HGTG20N120E2 is a MOS gated, high voltage switch ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop vari

          文件:167.55 Kbytes 頁數(shù):5 Pages

          INTERSIL

          G20N60B3

          40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

          The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

          文件:179.52 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          G20N60B3D

          40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

          The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

          文件:179.52 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          G20N60C3

          45A, 600V, UFS Series N-Channel IGBT

          This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

          文件:144.01 Kbytes 頁數(shù):8 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          G20N60HS

          High Speed IGBT in NPT-technology

          High Speed IGBT in NPT-technology ? 30 lower Eoff compared to previous generation ? Short circuit withstand time – 10 μs ? Designed for operation above 30 kHz ? NPT-Technology for 600V applications offers: ?? - parallel switching capability ?? - moderate Eoff increase with temperature ?? -

          文件:426.22 Kbytes 頁數(shù):11 Pages

          INFINEON

          英飛凌

          晶體管資料

          • 型號:

            G20

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

          • 性質(zhì):

            射頻/高頻放大 (HF)_靜噪放大 (LN)_寬頻帶放大

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

          • 最大電流允許值:

            0.1A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

          • 最大耗散功率:

            0.625W

          • 放大倍數(shù):

          • 圖片代號:

            A-11

          • vtest:

            0

          • htest:

            999900

          • atest:

            0.1

          • wtest:

            0.625

          技術(shù)參數(shù)

          • VCC (V)max.:

            6

          • VM (V)min.:

            2.9

          • VM (V)max.:

            5.5

          • CH:

            6+1

          • Build-inPI:

            3

          • ExteriorControl:

            Y(CH5~6)

          • SerialControl:

            Y

          • Note:

            CH12 & CH34

          • Package:

            TQFN5X5-40

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          XP Power
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          H
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          更多G20供應(yīng)商 更新時(shí)間2026-1-21 17:26:00
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