絲印：G20；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which can be driven by 2.5 V power supply. As the MOSFET is low Gate Leakage Current, it is suitable for appliances including Filter Circuit. FEATURES ? Directly driven by ICs having a 3 V powe

文件：915.97 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

絲?。?strong>G20；Package：PowerDI123；1.0A SURFACE MOUNT STANDARD RECOVERY RECTIFIER PowerDI123

Features - Glass Passivated Die Construction - Ideally Suited for Automated Assembly - Low Profile Design, Package Height Less than 1.0mm - Low Reverse Leakage Current - Exceptional Thermal Transfer Based on Exposed Heat Sink on the Underside of the Device - Lead-Free Finish; RoHS Compliant

文件：567.15 Kbytes 頁數(shù)：5 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?strong>G20；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲印：G2003A；Package：SOT-23-3L；Power switching application

Description The G2003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switching application

文件：1.56528 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G2009G；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G2009G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：643.17 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g200n06/marking.html">G200N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G200N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：831.95 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g200n10/marking.html">G200N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G200N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：920.07 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G200P04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：631.57 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g200p04/marking.html">G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G200P04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：871.86 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g200p04s2/marking.html">G200P04S2；Package：SOP-8DUAL；Dual P-Channel Enhancement Mode Power MOSFET

Description The G200P04S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：884.2 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體