N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：266.9 Kbytes 頁數(shù)：4 Pages

ETL

亞歷電子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：263.29 Kbytes 頁數(shù)：4 Pages

GTM

勤益投資控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

勤益投資控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：246.98 Kbytes 頁數(shù)：4 Pages

GTM

勤益投資控股

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 158A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 12mΩ(Max)@VGS= 10V APPLICATIONS · Battery Chargers · DC Choppers · Power Factor Correction (PFC) · DC-DC Converters · High Speed Power Switching Application

文件：583.84 Kbytes 頁數(shù)：3 Pages

ISC

無錫固電

Circular Connectors for Solder Terminations Conforming to JIS-C-5432

◆ FEATURES 1. Miniature and High Density The contacts available in this series are #20 and #16 2. 5 Keys to Prevent Mismating The shell has five keys. Alternate insert positions eliminate the connector mismating if more than one connector with the same size and arrangement is to be used in a

文件：324.77 Kbytes 頁數(shù)：7 Pages

DDK