SIDACs

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts

文件：26.44 Kbytes 頁數(shù)：1 Pages

EIC

Silicon Z??iodes

FEATURES ? High reliability ? Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads ? Wave and reflow solderable ? Glass passivated junction

文件：1.98202 Mbytes 頁數(shù)：3 Pages

TAYCHIPST

泰迪斯電子

SIDACs

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts

文件：84.13 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

DO-35 Case

文件：155.73 Kbytes 頁數(shù)：1 Pages

ETCList of Unclassifed Manufacturers

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絲印：G130；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲印：G130N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G130N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：969.35 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g130n06/marking.html">G130N06；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G130N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06846 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g130n06d/marking.html">G130N06D；Package：SOP-8Dual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G130N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.5 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

Thick Panel Rubber Grommets

文件：92.06 Kbytes 頁數(shù)：1 Pages

HEYCO

For Panels .250 (6,4 mm) to .375 (9,5 mm) Thick

文件：81.47 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

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