絲印：G05；Package：SOT-23；Plastic-Encap sulate Diodes

DESCRIPTION Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a small SOT-23 Surface-Mounted Device (SMD) plastic package designed to protect two data lines from the damage caused by ESD and other transients. FEATURES ? Bi-directional ESD protection of t

文件：254.63 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

絲印：G05；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 頁數(shù)：38 Pages

MICROCHIP

微芯科技

絲?。?a target="_blank" title="Marking" href="/g050n03/marking.html">G050N03；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G050N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.079 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g050p03/marking.html">G050P03；Package：DFN5/6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G050P03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：907.91 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G050P03；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G050P03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：579.64 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g050p03/marking.html">G050P03；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G050P03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.00091 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G050P03；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G050P03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：867.14 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g05np04/marking.html">G05NP04；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Application ? Power switch ? DC/DC converters

文件：1.28036 Mbytes 頁數(shù)：10 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g05np06/marking.html">G05NP06；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description This Product uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Application ? Power switch DC/DC converters

文件：1.35291 Mbytes 頁數(shù)：10 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g05np10/marking.html">G05NP10；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Application ? Power switch ? DC/DC converters

文件：1.16741 Mbytes 頁數(shù)：10 Pages

GOFORD

谷峰半導(dǎo)體