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          首頁 >G02>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          G02

          ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

          PRODUCT DESCRIPTION The G Series is a line of miniature, versatile component level building blocks that provide up to 6kV, positive or negative, in a compact PC mount package. The isolated output is directly proportional to the input, and is linear from approximately 0.7 volts in. Excellent flter

          文件:716.83 Kbytes 頁數(shù):10 Pages

          XPPOWER

          G02

          5WATTS SINGLE OUTPUT DC/DC INDUSTRIAL

          Features ? Low ripple ? Miniature case size ? Low EMI/RFI sinewave oscillator ? Proportional input/output ? User-selectable output polarity ? Low cost/high performance ? MTBF >2.29 million hrs per Bellcore TR-332

          文件:503.32 Kbytes 頁數(shù):1 Pages

          POWERBOX

          TPRT9742CGJ5

          絲?。?strong>G02;Package:SOT23-5;High-Side Power Switches with Flag

          Features ? Wide Supply Voltage Range: 2.5 to 5.5V ? Compliant to USB Specifications ? Current-Limit and Short-Circuit Protections. ? Enable Active Low/High ? Typical Rdson 70mQ (SOT-23-5) ? Thermal Shutdown Protection ? Current Limiting Protection ? Hot Plug-In Application(Soft

          文件:4.77064 Mbytes 頁數(shù):8 Pages

          TECHPUBLIC

          臺舟電子

          XC7SET02GV

          絲印:g02;Package:SOT753;2-input NOR gate

          1. General description XC7SET02 is a high-speed Si-gate CMOS device. It provides a 2-input NOR function. 2. Features and benefits ? Symmetrical output impedance ? High noise immunity ? Low power dissipation ? Balanced propagation delays ? TTL input levels ? ESD protection: ? HBM JESD22-A1

          文件:198.21 Kbytes 頁數(shù):10 Pages

          NEXPERIA

          安世

          G020N03D5

          絲?。?a target="_blank" title="Marking" href="/g020n03/marking.html">G020N03;Package:DFN5X6-8L;N-Channel Enhancement Mode Power MOSFET

          Description The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:731.77 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G020N03K

          絲印:G020N03;Package:TO-252;N-Channel Enhancement Mode Power MOSFET

          Description The G020N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:887.18 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G020N03T

          絲?。?a target="_blank" title="Marking" href="/g020n03/marking.html">G020N03;Package:TO-220;N-Channel Enhancement Mode Power MOSFET

          Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:1.01221 Mbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G025N03T

          絲印:G80N03;Package:TO-220;N-Channel Enhancement Mode Power MOSFET

          Description The G025N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:974.32 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G02CT

          ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

          PRODUCT DESCRIPTION The G Series is a line of miniature, versatile component level building blocks that provide up to 6kV, positive or negative, in a compact PC mount package. The isolated output is directly proportional to the input, and is linear from approximately 0.7 volts in. Excellent flter

          文件:716.83 Kbytes 頁數(shù):10 Pages

          XPPOWER

          G02P06

          絲?。?a target="_blank" title="Marking" href="/g02p06/marking.html">G02P06;Package:SOT-23;P-Channel Enhancement Mode Power MOSFET

          Description The G02P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:850.72 Kbytes 頁數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          晶體管資料

          • 型號:

            G02

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

          • 性質(zhì):

            射頻/高頻放大 (HF)_靜噪放大 (LN)_寬頻帶放大

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

          • 最大電流允許值:

            0.15A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

          • 最大耗散功率:

            0.4W

          • 放大倍數(shù):

          • 圖片代號:

            A-11

          • vtest:

            0

          • htest:

            999900

          • atest:

            0.15

          • wtest:

            0.4

          技術(shù)參數(shù)

          • Package:

            DFN5*6-8L

          • Type:

            N

          • ESD Diode:

            NO

          • Vds(V):

            30

          • Vgs(V):

            ±20

          • Id(A):

            140

          • Pd(W):

            83

          • Vgs(th)max(V):

            2

          • Rds(on)mΩ(typ)@Vgs=10V:

            1.5

          • Rds(on)mΩ(typ)@Vgs=4.5V:

            2.1

          • Rds(on)mΩ(max)@Vgs=10V:

            2

          • Rds(on)mΩ(max)@Vgs=4.5V:

            3

          • Qg(nC):

            110

          • Qgs(nC):

            14

          • Qgd(nC):

            26

          • Ciss(pF):

            5497

          • Crss(pF):

            899

          • Technology:

            TRENCH

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          更多G02供應(yīng)商 更新時間2026-1-19 9:48:00
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