絲?。?strong>G02；Package：SOT23-5；High-Side Power Switches with Flag

Features ? Wide Supply Voltage Range: 2.5 to 5.5V ? Compliant to USB Specifications ? Current-Limit and Short-Circuit Protections. ? Enable Active Low/High ? Typical Rdson 70mQ (SOT-23-5) ? Thermal Shutdown Protection ? Current Limiting Protection ? Hot Plug-In Application(Soft

文件：4.77064 Mbytes 頁數(shù)：8 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>g02；Package：SOT753；2-input NOR gate

1. General description XC7SET02 is a high-speed Si-gate CMOS device. It provides a 2-input NOR function. 2. Features and benefits ? Symmetrical output impedance ? High noise immunity ? Low power dissipation ? Balanced propagation delays ? TTL input levels ? ESD protection: ? HBM JESD22-A1

文件：198.21 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲印：G020N03；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：731.77 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g020n03/marking.html">G020N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G020N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：887.18 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G020N03；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01221 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G02P06；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G02P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：850.72 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g02p06/marking.html">G02P06；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G02P06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.0548 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g022n03/marking.html">G022N03；Package：TO-252-2L；N-Channel Enhancement Mode MOSFET

文件：1.033079 Mbytes 頁數(shù)：11 Pages

HUAYI

華羿微電

絲?。?a target="_blank" title="Marking" href="/g022n03/marking.html">G022N03；Package：TO-251-3L；N-Channel Enhancement Mode MOSFET

文件：1.033079 Mbytes 頁數(shù)：11 Pages

HUAYI

華羿微電

絲?。?a target="_blank" title="Marking" href="/g022n03/marking.html">G022N03；Package：TO-251-3S；N-Channel Enhancement Mode MOSFET

文件：1.033079 Mbytes 頁數(shù)：11 Pages

HUAYI

華羿微電